规格：晶体管封装类型 TO-220,
NTE ELECTRONICS
达林顿双极性功率晶体管, 双PNP, 65W
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 80V, 150A, TO-220-3
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 20.2 A, 600 V, 0.171 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 29 A, 600 V, 0.097 ohm, 10 V, 4 V
(EN)INFINEON
单晶体管, IGBT, 48 A, 1.65 V, 250 W, 600 V, TO-220, 3 引脚
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 20 A, 200 V, 38 mohm, 10 V, 3 V
(EN)
NTE ELECTRONICS
场效应管, MOSFET, N沟道, 60V V(BR)DSS
(EN)
INFINEON
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 37.9 A, 600 V, 0.09 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 14 A, 100 V, 0.11 ohm, 10 V, 4 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 42 A, 250 V, 84 mohm, 10 V, 5.5 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 13 A, 600 V, 0.26 ohm, 10 V, 3 V
(EN)INFINEON
单晶体管, IGBT, 15 A, 1.6 V, 105 W, 650 V, TO-220, 3 引脚
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 10 A, 950 V, 0.68 ohm, 10 V, 4 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET, N沟道, 150 A, 80 V, 0.0026 ohm, 10 V, 2.6 V
(EN)INFINEON
单晶体管, IGBT, 15 A, 1.65 V, 105 W, 650 V, TO-220, 3 引脚
(EN)
NTE ELECTRONICS
芯片, MOSFET增强型高速开关, 125W, 18A
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 17 A, 600 V, 0.17 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 3.9 A, 600 V, 1 ohm, 10 V, 5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 20 A, 500 V, 230 mohm, 10 V, 5 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.13 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.64 ohm, 10 V, 3 V
(EN)
NTE ELECTRONICS
芯片, 高速开关, MOSFET, N沟道, 20A, TO220-3
(EN)STMICROELECTRONICS
单晶体管 双极, NPN, 400 V, 70 W, 3 A, 10 hFE
(EN)
