规格：晶体管封装类型 TO-220,
ON SEMICONDUCTOR
单晶体管 双极, NPN, 60 V, 2 MHz, 75 W, 10 A, 5 hFE
(EN)INFINEON
晶体管, MOSFET, N沟道, 44 A, 300 V, 0.036 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, 达林顿, NPN, 400 V, 80 W, 8 A, 400 hFE
(EN)
ON SEMICONDUCTOR
双极晶体管
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.002 ohm, 10 V, 3 V
(EN)MULTICOMP
单晶体管 双极, 通用, NPN, 60 V, 3 MHz, 40 W, 3 A, 10 hFE
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, 汽车, N沟道, 80 A, 75 V, 0.0048 ohm, 10 V, 4 V
(EN)INFINEON
单晶体管, IGBT, 42 A, 1.65 V, 125 W, 650 V, TO-220, 3 引脚
(EN)INFINEON
晶体管, MOSFET, N沟道, 17 A, 250 V, 0.085 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 A, 75 V, 0.0021 ohm, 10 V, 3.1 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 3 A, 900 V, 4.1 ohm, 10 V, 3.75 V
(EN)INFINEON
单晶体管, IGBT, 通用, 20 A, 2.05 V, 110 W, 600 V, TO-220, 3 引脚
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 18 A, 80 V, 28 mohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 18 A, 200 V, 125 mohm, 10 V, 3 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 740 mohm, 10 V, 5.5 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 15 A, 55 V, 13 mohm, 5 V, 2.5 V
(EN)
NTE ELECTRONICS
场效应管, MOSFET, N沟道, 1KV, 3.1A, TO-220
(EN)NTE ELECTRONICS
晶体管, MOSFET, N沟道, 50 A, 60 V, 28 mohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR
达林顿双极晶体管
(EN)MICROSEMI
场效应管, MOSFET, N沟道, 500V, 15A, TO-220
(EN)STMICROELECTRONICS
单晶体管 双极, NPN, 100 V, 3 MHz, 65 W, 6 A, 30 hFE
(EN)STMICROELECTRONICS
单晶体管 双极, PNP, 100 V, 65 W, 6 A, 30 hFE
(EN)STMICROELECTRONICS
单晶体管 双极, PNP, 60 V, 50 W, -6 A, 40 hFE
(EN)STMICROELECTRONICS
单晶体管 双极, NPN, 80 V, 50 W, 6 A, 40 hFE
(EN)SEMELAB
单晶体管 双极, 达林顿, NPN, 60 V, 10 MHz, 62.5 W, 8 A, 1500 hFE
(EN)
