规格：晶体管封装类型 TO-3P,
MULTICOMP
单晶体管 双极, 达林顿, NPN, 380 V, 125 W, 10 A, 200 hFE
(EN)RENESAS
功率场效应管, MOSFET, N沟道, 2.5 A, 1.5 kV, 12 ohm, 15 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 50 A, 2.5 V, 312 W, 1.2 kV, TO-3P, 3 引脚
(EN)
TOSHIBA
功率场效应管, MOSFET, N沟道, 9 A, 900 V, 1.3 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
晶体管, NPN
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, 通用, N沟道, 70 A, 100 V, 23 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -36 A, -150 V, 90 mohm, -10 V, -4 V
(EN)ALLEGRO SANKEN
单晶体管 双极, PNP, -160 V, 40 MHz, 130 W, -15 A, 50 hFE
(EN)FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.106 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 59 A, 300 V, 0.047 ohm, 10 V, 5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 18.5 A, 600 V, 380 mohm, 10 V, 5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 59 A, 250 V, 49 mohm, 10 V, 5 V
(EN)ON SEMICONDUCTOR
晶体管, PNP
(EN)ALLEGRO SANKEN
单晶体管 双极, 达林顿, PNP, 150 V, 50 MHz, 100 W, 10 A, 5000 hFE
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 23.5 A, 600 V, 240 mohm, 10 V, 5 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, 音频, NPN, 250 V, 30 MHz, 150 W, 15 A, 75 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 30 A, 2.3 V, 186 W, 1.2 kV, TO-3P, 3 引脚
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 55 A, 250 V, 40 mohm, 10 V, 5 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, AEC-Q100, PNP, -250 V, 30 MHz, 200 W, -15 A, 45 hFE
(EN)STMICROELECTRONICS
单晶体管 双极, NPN, 140 V, 20 MHz, 100 W, 12 A, 50 hFE
(EN)ON SEMICONDUCTOR
音频晶体管, NPN
(EN)TOSHIBA
单晶体管 双极, NPN, 230 V, 30 MHz, 150 W, 15 A, 160 hFE
(EN)
TOSHIBA
单晶体管, IGBT, 50 A, 2.45 V, 240 W, 600 V, TO-3P, 3 引脚
(EN)
