规格：晶体管封装类型 SOT-223,
NEXPERIA
单晶体管 双极, NPN, 80 V, 100 MHz, 1.3 W, 1 A, 30 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 45 V, 200 MHz, 1 W, 800 mA, 1000 hFE
(EN)NEXPERIA
单晶体管 双极, 达林顿, NPN, 45 V, 200 MHz, 1.25 W, 1 A, 2000 hFE
(EN)NEXPERIA
单晶体管 双极, 达林顿, NPN, 60 V, 200 MHz, 1.25 W, 1 A, 2000 hFE
(EN)NEXPERIA
单晶体管 双极, NPN, 80 V, 200 MHz, 1.25 W, 1 A, 2000 hFE
(EN)NEXPERIA
单晶体管 双极, NPN, 80 V, 200 MHz, 1.25 W, 1 A, 2000 hFE
(EN)
ON SEMICONDUCTOR
单晶体管 双极, 达林顿, NPN, 80 V, 800 mW, 1 A, 1000 hFE
(EN)NEXPERIA
单晶体管 双极, 达林顿, PNP, -60 V, 200 MHz, 1.25 W, -1 A, 1000 hFE
(EN)
INFINEON
晶体管, MOSFET, P沟道, -2.9 A, -60 V, 0.11 ohm, -10 V, -3 V
(EN)NEXPERIA
单晶体管 双极, PNP, -80 V, 200 MHz, 1.25 W, -1 A, 2000 hFE
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 1.4 A, 60 V, 550 mohm, 10 V, 2.1 V
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 1.1 A, 60 V, 500 mohm, 10 V, 2.1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 350 mA, 240 V, 4 ohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 360 mA, 240 V, 4.2 ohm, 10 V, 1.4 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 340 mA, 240 V, 2.8 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -260 mA, -250 V, 7.5 ohm, -10 V, -1.5 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 5.5 A, 55 V, 150 mohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 5.5 A, 55 V, 150 mohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 5.5 A, 55 V, 137 mohm, 10 V, 1.5 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 5.5 A, 55 V, 137 mohm, 10 V, 1.5 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 4.6 A, 100 V, 173 mohm, 10 V, 1.5 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 4.6 A, 100 V, 173 mohm, 10 V, 1.5 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 10.7 A, 55 V, 40 mohm, 5 V, 1.5 V
(EN)CLARE
晶体管, MOSFET, N沟道, 130 mA, 350 V, 8 ohm, -350 mV
(EN)
CLARE
场效应管, MOSFET, N沟道, 耗尽型, 350V, 8Ω, 5MA, SOT-223-4, 整卷
(EN)
