规格：晶体管封装类型 SOT-363,
DIODES INC.
单晶体管 双极, NPN, PNP, 40 V, 300 MHz, 200 mW, 600 mA, 100 hFE
(EN)
NEXPERIA
单晶体管 双极, NPN, PNP, 40 V, 300 MHz, 350 mW, 200 mA, 100 hFE
(EN)
VISHAY
双路场效应管, MOSFET, 双P沟道, -1.3 A, -20 V, 0.64 ohm, -1.8 V, -400 mV
(EN)ON SEMICONDUCTOR
双极晶体管阵列, NPN, PNP, 40 V, 150 mW, 200 mA, 30 hFE, SOT-363
(EN)NEXPERIA
双路场效应管, MOSFET, N和P沟道, 725 mA, 20 V, 0.29 ohm, 4.5 V, 750 mV
(EN)ON SEMICONDUCTOR
双极晶体管阵列, NPN, 65 V, 380 mW, 100 mA, 200 hFE, SOT-363
(EN)NEXPERIA
双路场效应管, MOSFET, 双N沟道, 350 mA, 30 V, 1 ohm, 4.5 V, 900 mV
(EN)
ON SEMICONDUCTOR
Bipolar Transistor Array, Dual PNP, -45 V, 380 mW, -100 mA, 220 hFE, SOT-363
(EN)
MICRO COMMERCIAL COMPONENTS
场效应管, 双路, N通道, MOSFET, 60V, 115MA, SOT-3
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 1.8 A, 30 V, 0.145 ohm, 10 V, 2.6 V
(EN)INFINEON
晶体管, MOSFET, BRT, 双N沟道, 300 mA, 60 V, 1.6 ohm, 10 V, 2.1 V
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 250 mA, 30 V, 1 ohm, 4 V, 1.2 V
(EN)DIODES INC.
双极晶体管阵列, 双路, NPN, PNP, 160 V, 200 mW, 200 mA, 80 hFE, SOT-363
(EN)ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 304 mA, 60 V, 1 ohm, 10 V, 1.7 V
(EN)NEXPERIA
双路场效应管, MOSFET, N和P沟道, 350 mA, 30 V, 1 ohm, 4.5 V, 900 mV
(EN)DIODES INC.
双路场效应管, MOSFET, 双P沟道, -130 mA, -50 V, 10 ohm, -5 V, -1.6 V
(EN)DIODES INC.
双极晶体管阵列, 双路, NPN, 40 V, 200 mW, 200 mA, 100 hFE, SOT-363
(EN)DIODES INC.
双极晶体管阵列, 双路, NPN, 45 V, 200 mW, 100 mA, 200 hFE, SOT-363
(EN)
VISHAY
晶体管, MOSFET, P沟道, -2.1 A, -20 V, 0.116 ohm, -4.5 V, 600 mV
(EN)ON SEMICONDUCTOR
双极晶体管阵列, 双NPN, 45 V, 380 mW, 100 mA, 200 hFE, SOT-363
(EN)VISHAY
双路场效应管, MOSFET, 双N沟道, 370 mA, 60 V, 1.4 ohm, 10 V, 2.5 V
(EN)NEXPERIA
双极晶体管阵列, PNP, -65 V, 300 mW, -100 mA, 290 hFE, SOT-363
(EN)NEXPERIA
双路场效应管, MOSFET, Trench, 双N沟道, 320 mA, 60 V, 1 ohm, 10 V, 1.1 V
(EN)DIODES INC.
双路场效应管, MOSFET, 双N沟道, 115 mA, 60 V, 13.5 ohm, 10 V, 2 V
(EN)
