规格：晶体管封装类型 SOT-363,
DIODES INC.
双路场效应管, MOSFET, AEC-Q101, 双N沟道, 260 mA, 30 V, 2.8 ohm, 10 V, 1.5 V
(EN)
ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, Dual NPN, 45 V, 100 MHz, 380 mW, 100 mA, 150 hFE
(EN)
NEXPERIA
双路场效应管, MOSFET, 沟槽式, 双N沟道, 240 mA, 60 V, 2.2 ohm, 10 V, 1.6 V
(EN)DIODES INC.
双路场效应管, MOSFET, AEC-Q101, N和P, 845 mA, 20 V, 0.3 ohm, 4.5 V, 1 V
(EN)ON SEMICONDUCTOR
双极晶体管阵列, NPN, PNP, 45 V, 380 mW, 100 mA, 200 hFE, SOT-363
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 60V, 115mA, SOT-363
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 1.13 A, 20 V, 0.22 ohm, 4.5 V, 450 mV
(EN)
NEXPERIA
双路场效应管, MOSFET, 双P沟道, -160 mA, -50 V, 4.5 ohm, -10 V, -1.6 V
(EN)
MULTICOMP
场效应管, MOSFET, 双路N沟道, 60V, 4.4Ω, 115mA, SOT-363-6
(EN)NEXPERIA
双路场效应管, MOSFET, 双N沟道, 320 mA, 60 V, 0.9 ohm, 10 V, 1.2 V
(EN)VISHAY
双路场效应管, MOSFET, 双N沟道, 1.3 A, 20 V, 0.165 ohm, 4.5 V, 400 mV
(EN)ROHM
双极晶体管阵列, 双路, NPN, 50 V, 150 mW, 150 mA, 120 hFE, SOT-363
(EN)VISHAY
晶体管, MOSFET, N沟道, 2.6 A, 100 V, 0.161 ohm, 10 V, 1.6 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -420 mA, -150 V, 2.05 ohm, -6 V, -4.5 V
(EN)
VISHAY
MOSFET, P CHANNEL, -30V, -2.7A, SOT-363-6
(EN)NEXPERIA
单晶体管 双极, NPN, 40 V, 300 MHz, 230 mW, 200 mA, 100 hFE
(EN)DIODES INC.
双极晶体管阵列, 双路, PNP, -60 V, 200 mW, -600 mA, 100 hFE, SOT-363
(EN)NEXPERIA
单晶体管 双极, NPN, PNP, 40 V, 100 MHz, 200 mW, 100 mA, 120 hFE
(EN)DIODES INC.
双极晶体管阵列, 双路, PNP, -40 V, 200 mW, -200 mA, 100 hFE, SOT-363
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 295 mA, 60 V, 1 ohm, 10 V, 1.7 V
(EN)
MICRO COMMERCIAL COMPONENTS
双极性晶体管, 双NPN, 45VDC, SOT-363
(EN)DIODES INC.
双路场效应管, MOSFET, 双N沟道, 305 mA, 50 V, 2 ohm, 5 V, 1 V
(EN)DIODES INC.
双路场效应管, MOSFET, N和P沟道, 115 mA, 60 V, 13.5 ohm, 10 V, 2.5 V
(EN)VISHAY
MOSFET, DUAL P CHANNEL, -20V, -1.3A, SOT-363-6
(EN)NEXPERIA
单晶体管 双极, NPN, 65 V, 100 MHz, 200 mW, 100 mA, 200 hFE
(EN)
