品牌：STMICROELECTRONICS,规格：晶体管封装类型 TO-247,
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 30 A, 300 V, 37 mohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 58 A, 650 V, 0.037 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 13 A, 600 V, 0.26 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
单晶体管 双极, NPN, 450 V, 125 W, 15 A, 8 hFE
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 45 A, 550 V, 100 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
单晶体管 双极, NPN, 250 V, 180 W, 60 A, 9 hFE
(EN)STMICROELECTRONICS
单晶体管 双极, NPN, 700 V, 125 W, 8 A, 5 hFE
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 30 A, 500 V, 120 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 9.5 A, 900 V, 400 mohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
单晶体管, IGBT, 60 A, 2.5 V, 200 W, 600 V, TO-247, 3 引脚
(EN)STMICROELECTRONICS
单晶体管 双极, PNP, 100 V, 3 MHz, 125 W, 25 A, 50 hFE
(EN)STMICROELECTRONICS
单晶体管, IGBT, 63 A, 1.3 kV, 250 W, 1.3 kV, TO-247, 3 引脚
(EN)STMICROELECTRONICS
单晶体管, IGBT, 60 A, 2.5 V, 200 W, 600 V, TO-247, 3 引脚
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 6 A, 1.2 kV, 1.95 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 9.2 A, 900 V, 0.82 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 11 A, 900 V, 0.72 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.25 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
晶体管, IGBT, TO247
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 39 A, 600 V, 0.055 ohm, 10 V, 3.2 V
(EN)STMICROELECTRONICS
单晶体管 双极, PNP, 70 V, 90 W, 15 A, 20 hFE
(EN)STMICROELECTRONICS
晶体管, IGBT, TO247
(EN)STMICROELECTRONICS
晶体管, IGBT, TO247
(EN)STMICROELECTRONICS
晶体管, IGBT, TO247
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 49 A, 650 V, 0.049 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.13 ohm, 10 V, 4 V
(EN)
