规格：晶体管封装类型 TO-247,
ON SEMICONDUCTOR
单晶体管, IGBT, 50 A, 2 V, 192 W, 1.2 kV, TO-247, 3 引脚
(EN)STMICROELECTRONICS
单晶体管 双极, PNP, 70 V, 90 W, 15 A, 20 hFE
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 60 A, 1.8 V, 250 W, 600 V, TO-247, 3 引脚
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 60 A, 1.45 V, 167 W, 600 V, TO-247, 3 引脚
(EN)INFINEON
单晶体管, IGBT, 40 A, 1.6 V, 255 W, 650 V, TO-247, 3 引脚
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 160 A, 1.7 V, 454 W, 1.2 kV, TO-247, 3 引脚
(EN)
ON SEMICONDUCTOR
单晶体管 双极, NPN, 450 V, 13 MHz, 250 W, 30 A, 4 hFE
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 40 A, 2.2 V, 341 W, 1.2 kV, TO-247, 3 引脚
(EN)STMICROELECTRONICS
晶体管, IGBT, TO247
(EN)STMICROELECTRONICS
晶体管, IGBT, TO247
(EN)RENESAS
单晶体管, IGBT, 60 A, 1.7 V, 235.8 W, 600 V, TO-247, 3 引脚
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, 通用, N沟道, 75 A, 55 V, 7 mohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 90 A, 2 V, 300 W, 600 V, TO-247, 3 引脚
(EN)ROHM
功率场效应管, MOSFET, N沟道, 14 A, 1.2 kV, 0.28 ohm, 18 V, 4 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, NPN, 80 V, 125 W, 10 A, 500 hFE
(EN)ON SEMICONDUCTOR
单晶体管 双极, PNP, -230 V, 30 MHz, 200 W, -15 A, 12 hFE
(EN)INFINEON
单晶体管, IGBT, 40 A, 1.6 V, 255 W, 650 V, TO-247, 3 引脚
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 36 A, 600 V, 190 mohm, 10 V, 5 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 31 A, 600 V, 99 mohm, 10 V, 3 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 20.2 A, 600 V, 0.171 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, IGBT, TO247
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 50 A, 2 V, 385 W, 1.2 kV, TO-247, 3 引脚
(EN)
