规格：晶体管封装类型 TO-247,
WOLFSPEED
功率场效应管, MOSFET, N沟道, 22 A, 1 kV, 0.12 ohm, 15 V, 2.1 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 49 A, 650 V, 0.049 ohm, 10 V, 3 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 26 A, 500 V, 200 mohm, 10 V, 4 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 6 A, 1 kV, 2 ohm, 10 V, 4.5 V
(EN)INFINEON
单晶体管, IGBT, 15 A, 1.7 V, 254 W, 1.2 kV, TO-247, 3 引脚
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 24 A, 500 V, 230 mohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 25 A, 600 V, 0.108 ohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, NPN, 200 V, 3 MHz, 150 W, 15 A, 400 hFE
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.13 ohm, 10 V, 4 V
(EN)
VISHAY
场效应管, N通道, MOSFET, 900V, 4.7A TO-247
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 26 A, 600 V, 250 mohm, 10 V, 4.5 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, HiPerFET, N沟道, 24 A, 500 V, 230 mohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 84 A, 650 V, 0.024 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 75 A, 2.7 V, 463 W, 600 V, TO-247, 3 引脚
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.17 ohm, 10 V, 4 V
(EN)ROHM
功率场效应管, MOSFET, N沟道, 35 A, 1.2 kV, 0.08 ohm, 18 V, 4 V
(EN)STMICROELECTRONICS
单晶体管 双极, 达林顿, PNP, -100 V, 125 W, -10 A, 500 hFE
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, LINEAR L2?, N沟道, 15 A, 500 V, 480 mohm, 10 V, 2.5 V
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 100 A, 1.75 V, 595 W, 650 V, TO-247, 3 引脚
(EN)RENESAS
单晶体管, IGBT, 80 A, 1.7 V, 260.4 W, 600 V, TO-247, 3 引脚
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 21 A, 600 V, 0.13 ohm, 10 V, 4 V
(EN)
