规格：晶体管封装类型 TO-247,
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 7 A, 500 V, 0.3 ohm, 30 V, 3.75 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 80 A, 650 V, 0.038 ohm, 10 V, 5 V
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 24 A, 600 V, 0.11 ohm, 10 V, 4 V
(EN)SEMELAB
晶体管, MOSFET, P沟道, 8 A, -200 V, 1.5 ohm, -1.5 V
(EN)STMICROELECTRONICS
单晶体管, IGBT, 80 A, 2.5 V, 250 W, 600 V, TO-247, 3 引脚
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 17 A, 500 V, 0.162 ohm, 10 V, 3 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 88 A, 300 V, 40 mohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR
单晶体管, IGBT, 60 A, 1.9 V, 189 W, 600 V, TO-247, 3 引脚
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 80 A, 2 V, 417 W, 600 V, TO-247, 3 引脚
(EN)ON SEMICONDUCTOR
单晶体管 双极, NPN, -100 V, 3 MHz, 125 W, -25 A, 15 hFE
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 100 A, 1.7 V, 595 W, 600 V, TO-247, 3 引脚
(EN)
FUJI ELECTRIC
单晶体管, IGBT, 95 A, 1.5 V, 360 W, 600 V, TO-247, 3 引脚
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 60 A, 2.2 V, 384 W, 1.2 kV, TO-247, 3 引脚
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 通用, 54 A, 2.7 V, 167 W, 600 V, TO-247, 3 引脚
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 46 A, 650 V, 0.069 ohm, 10 V, 5.5 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 46 A, 650 V, 0.04 ohm, 10 V, 3.5 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 83.2 A, 650 V, 0.033 ohm, 10 V, 3 V
(EN)FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.161 ohm, 10 V, 3 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 62 A, 650 V, 0.05 ohm, 10 V, 5 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 34 A, 650 V, 0.096 ohm, 10 V, 5 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 35 A, 600 V, 0.075 ohm, 10 V, 4 V
(EN)
