规格：晶体管封装类型 TO-247,
INFINEON
单晶体管, IGBT, 15 A, 2.2 V, 110 W, 1.2 kV, TO-247, 3 引脚
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 24 A, 650 V, 0.404 ohm, 10 V, 3.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 16 A, 560 V, 0.25 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 60 A, 1.75 V, 560 W, 1.2 kV, TO-247, 3 引脚
(EN)INFINEON
单晶体管, IGBT, 30 A, 2.05 V, 217 W, 1.2 kV, TO-247, 3 引脚
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 44 A, 500 V, 140 mohm, 10 V, 5 V
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 47 A, 600 V, 0.066 ohm, 10 V, 4 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 21 A, 500 V, 250 mohm, 10 V, 4 V
(EN)SEMELAB
单晶体管 双极, PNP, 100 V, 125 W, 16 A, 3000 hFE
(EN)SEMELAB
晶体管, MOSFET, N沟道, 8 A, 200 V, 1.5 ohm, 1.5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 22 A, 650 V, 0.145 ohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR
单晶体管, IGBT, 100 A, 1.64 V, 595 W, 650 V, TO-247, 3 引脚
(EN)INFINEON
单晶体管, IGBT, 50 A, 1.6 V, 305 W, 650 V, TO-247, 3 引脚
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 24 A, 650 V, 0.084 ohm, 10 V, 3.5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 80 A, 650 V, 0.038 ohm, 10 V, 5 V
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 80 A, 1.7 V, 366 W, 600 V, TO-247, 3 引脚
(EN)INFINEON
单晶体管, IGBT, 通用, 16 A, 2.2 V, 70 W, 1.2 kV, TO-247, 3 引脚
(EN)INFINEON
单晶体管, IGBT, 50 A, 2 V, 333 W, 600 V, TO-247, 3 引脚
(EN)INFINEON
单晶体管, IGBT, 40 A, 2.05 V, 303 W, 600 V, TO-247, 3 引脚
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 24 A, 900 V, 0.42 ohm, 10 V, 3.5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 50 A, 600 V, 0.16 ohm, 10 V, 5 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, HiPerFET, N沟道, 52 A, 300 V, 60 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 3.5 A, 1 kV, 3.7 ohm, 10 V, 3.75 V
(EN)INFINEON
单晶体管, IGBT, 30 A, 2.05 V, 217 W, 1.2 kV, TO-247, 3 引脚
(EN)ROHM
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.115 ohm, 10 V, 5 V
(EN)
