规格：晶体管封装类型 TO-247,
STMICROELECTRONICS
单晶体管, IGBT, 80 A, 1.85 V, 468 W, 1.2 kV, TO-247, 3 引脚
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 23.8 A, 600 V, 0.14 ohm, 10 V, 3 V
(EN)INFINEON
单晶体管, IGBT, 48 A, 1.65 V, 250 W, 600 V, TO-247, 3 引脚
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, LINEAR L2?, N沟道, 40 A, 500 V, 170 mohm, 10 V, 2.5 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 34.1 A, 600 V, 0.1 ohm, 10 V, 4 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 110 A, 100 V, 15 mohm, 10 V, 5 V
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 100 A, 1.45 V, 223 W, 600 V, TO-247, 3 引脚
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 51 A, 600 V, 0.047 ohm, 10 V, 4 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 120 A, 200 V, 22 mohm, 10 V, 5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 12 A, 1.2 kV, 1.35 ohm, 10 V, 6.5 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 36 A, 500 V, 0.17 ohm, 10 V, 5 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 75 A, 100 V, 20 mohm, 10 V, 4 V
(EN)IXYS SEMICONDUCTOR
单晶体管, IGBT, 32 A, 2.7 V, 190 W, 1.7 kV, TO-247, 3 引脚
(EN)IXYS SEMICONDUCTOR
单晶体管, IGBT, 40 A, 2.35 V, 300 W, 650 V, TO-247, 3 引脚
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 60 A, 2 V, 192 W, 1.2 kV, TO-247, 3 引脚
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 100 A, 1.65 V, 223 W, 600 V, TO-247, 3 引脚
(EN)
STMICROELECTRONICS
晶体管, IGBT, TO247
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 17 A, 600 V, 0.17 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 70 A, 1.7 V, 300 W, 600 V, TO-247, 3 引脚
(EN)ROHM
功率场效应管, MOSFET, N沟道, 76 A, 600 V, 0.04 ohm, 10 V, 5 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, LINEAR L2?, N沟道, 30 A, 500 V, 200 mohm, 10 V, 2.5 V
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 70 A, 1.7 V, 300 W, 650 V, TO-247, 3 引脚
(EN)IXYS SEMICONDUCTOR
单晶体管, IGBT, 60 A, 2.2 V, 455 W, 650 V, TO-247, 3 引脚
(EN)
