规格：晶体管封装类型 TO-247,
FUJI ELECTRIC
单晶体管, IGBT, 28 A, 1.85 V, 155 W, 1.2 kV, TO-247, 3 引脚
(EN)
INFINEON
单晶体管, IGBT, 75 A, 2 V, 428 W, 600 V, TO-247, 3 引脚
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 12 A, 900 V, 900 mohm, 10 V, 3.5 V
(EN)FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.106 ohm, 10 V, 3 V
(EN)INFINEON
单晶体管, IGBT, 75 A, 1.75 V, 480 W, 1.2 kV, TO-247, 3 引脚
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 29 A, 600 V, 0.092 ohm, 10 V, 3 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 24 A, 800 V, 400 mohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 48 A, 650 V, 0.065 ohm, 10 V, 5 V
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 12 A, 600 V, 0.26 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
单晶体管, IGBT, 80 A, 2 V, 535 W, 1.2 kV, TO-247, 3 引脚
(EN)IXYS SEMICONDUCTOR
Silicon Carbide IGBT Single Transistor, 60 A, 3 V, 220 W, 600 V, TO-247, 3 Pins
(EN)INFINEON
单晶体管, IGBT, 40 A, 1.5 V, 166 W, 600 V, TO-247, 3 引脚
(EN)STMICROELECTRONICS
单晶体管, IGBT, 70 A, 1.7 V, 200 W, 600 V, TO-247, 3 引脚
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 18 A, 1 kV, 0.66 ohm, 10 V, 6.5 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 8.3 A, 600 V, 0.19 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 26 A, 250 V, 33 mohm, 10 V, 3.75 V
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 80 A, 1.7 V, 366 W, 650 V, TO-247, 3 引脚
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 11 A, 800 V, 350 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 21 A, 500 V, 0.135 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 28 A, 600 V, 0.094 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 50 A, 1.85 V, 192 W, 1.2 kV, TO-247, 3 引脚
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 90 A, 2 V, 300 W, 600 V, TO-247, 3 引脚
(EN)
