规格：晶体管封装类型 TO-247,
IXYS SEMICONDUCTOR
单晶体管, IGBT, 50 A, 2.5 V, 250 W, 1.7 kV, TO-247, 3 引脚
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 20 A, 500 V, 0.3 ohm, 10 V, 5 V
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 76 A, 600 V, 0.038 ohm, 10 V, 4 V
(EN)
FUJI ELECTRIC
单晶体管, IGBT, 31 A, 1.8 V, 155 W, 1.2 kV, TO-247, 3 引脚
(EN)INFINEON
单晶体管, IGBT, 40 A, 2.4 V, 305 W, 600 V, TO-247, 3 引脚
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 100V, 75A, TO-247
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 50 A, 600 V, 0.052 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 46 A, 300 V, 49 mohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR
单晶体管, IGBT, 30 A, 2.1 V, 278 W, 1.2 kV, TO-247, 3 引脚
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 80 A, 2 V, 250 W, 600 V, TO-247, 3 引脚
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 17 A, 600 V, 0.168 ohm, 10 V, 3 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 15 A, 1 kV, 700 mohm, 10 V, 4.5 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 10 A, 950 V, 0.69 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 17 A, 800 V, 0.25 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
单晶体管, IGBT, 120 A, 1.85 V, 469 W, 600 V, TO-247, 3 引脚
(EN)STMICROELECTRONICS
单晶体管, IGBT, 60 A, 1.55 V, 258 W, 650 V, TO-247, 3 引脚
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 场截止沟道, 150 A, 1.6 V, 455 W, 650 V, TO-247, 4 引脚
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, N通道, 80 A, 2.3 V, 428 W, 1.2 kV, TO-247, 3 引脚
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 76 A, 650 V, 0.036 ohm, 10 V, 5 V
(EN)INFINEON
功率场效应管, MOSFET, AEC-Q101, N沟道, 63.3 A, 650 V, 0.043 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 35 A, 600 V, 0.079 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 23 A, 550 V, 0.13 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 17 A, 550 V, 0.18 ohm, 10 V, 3 V
