规格：晶体管封装类型 TO-247,
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 45.8 A, 600 V, 0.0575 ohm, 10 V, 3 V
(EN)INFINEON
单晶体管, IGBT, 50 A, 1.65 V, 305 W, 650 V, TO-247, 3 引脚
(EN)INFINEON
单晶体管, IGBT, 50 A, 1.65 V, 305 W, 650 V, TO-247, 3 引脚
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 24 A, 600 V, 0.15 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 60 A, 1.75 V, 260 W, 1.2 kV, TO-247, 3 引脚
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 6 A, 650 V, 0.594 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 电源单元和太阳能应用, 70 A, 1.7 V, 300 W, 650 V, TO-247, 3 引脚
(EN)INFINEON
单晶体管, IGBT, 50 A, 2.05 V, 326 W, 1.2 kV, TO-247, 3 引脚
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 12 A, 650 V, 0.3 ohm, 10 V, 4.5 V
(EN)ROHM
功率场效应管, MOSFET, N沟道, 24 A, 600 V, 0.15 ohm, 10 V, 5 V
(EN)ROHM
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.115 ohm, 10 V, 4 V
(EN)
VISHAY
场效应管, N通道, MOSFET, 600V, 16A, TO-247
(EN)ROHM
功率场效应管, MOSFET, N沟道, 35 A, 600 V, 0.092 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 80 A, 2 V, 260 W, 1.2 kV, TO-247, 3 引脚
(EN)
FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 47 A, 600 V, 0.059 ohm, 10 V, 3 V
(EN)GENESIC SEMICONDUCTOR
单晶体管, IGBT, 硅, 35 A, 1.2 kV, TO-247, 3 引脚
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 42 A, 600 V, 0.185 ohm, 10 V, 4.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 76 A, 600 V, 0.028 ohm, 10 V, 2 V
(EN)STMICROELECTRONICS
单晶体管, IGBT, 80 A, 2.8 V, 240 W, 1.2 kV, TO-247, 3 引脚
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 80 A, 100 V, 0.0075 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 40 A, 200 V, 0.038 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, 音频, PNP, -250 V, 4 MHz, 200 W, -30 A, 20 hFE
(EN)INFINEON
单晶体管, IGBT, 30 A, 2.4 V, 187 W, 600 V, TO-247, 3 引脚
(EN)
