规格：晶体管封装类型 TO-247,
WOLFSPEED
场效应管, MOSFET, N沟道, 1.7KV, 4.9A, TO-247-3
(EN)
VISHAY
晶体管, MOSFET, N沟道, 100 A, 200 V, 0.0079 ohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 100 A, 150 V, 0.0045 ohm, 10 V, 4 V
(EN)
INFINEON
单晶体管, IGBT, 40 A, 2.4 V, 483 W, 1.2 kV, TO-247, 3 引脚
(EN)INFINEON
单晶体管, IGBT, 40 A, 1.65 V, 288 W, 1.35 kV, TO-247, 3 引脚
(EN)INFINEON
单晶体管, IGBT, 50 A, 1.6 V, 305 W, 650 V, TO-247, 3 引脚
(EN)INFINEON
单晶体管, IGBT, 通用, 80 A, 2 V, 428 W, 600 V, TO-247, 3 引脚
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 31.2 A, 700 V, 0.099 ohm, 10 V, 4 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 30 A, 500 V, 200 mohm, 10 V, 5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 12 A, 1 kV, 1.05 ohm, 10 V, 4.5 V
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 50 A, 1.85 V, 192 W, 1.2 kV, TO-247, 3 引脚
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 34 A, 650 V, 0.1 ohm, 10 V, 5 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 13 A, 1 kV, 700 mohm, 10 V, 3.75 V
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 100 A, 2.2 V, 535 W, 1.2 kV, TO-247, 3 引脚
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.65 ohm, 10 V, 3.75 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 96 A, 200 V, 24 mohm, 10 V, 5 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 33 A, 650 V, 0.07 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 40 A, 600 V, 0.065 ohm, 10 V, 4 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 20 A, 800 V, 420 mohm, 10 V, 4.5 V
(EN)SEMELAB
晶体管, MOSFET, N沟道, 8 A, 160 V
(EN)
SEMELAB
双路场效应管, MOSFET, N和P沟道, 8 A, 160 V
(EN)SEMELAB
晶体管, MOSFET, P沟道, -8 A, -160 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 72.8 A, 600 V, 0.0287 ohm, 10 V, 3 V
(EN)
FUJI ELECTRIC
单晶体管, IGBT, 48 A, 1.85 V, 260 W, 1.2 kV, TO-247, 3 引脚
(EN)FUJI ELECTRIC
单晶体管, IGBT, 55 A, 1.6 V, 230 W, 600 V, TO-247, 3 引脚
(EN)
