规格：晶体管封装类型 TO-247,
FUJI ELECTRIC
单晶体管, IGBT, 64 A, 1.5 V, 230 W, 600 V, TO-247, 3 引脚
(EN)FUJI ELECTRIC
单晶体管, IGBT, 70 A, 1.8 V, 340 W, 1.2 kV, TO-247, 3 引脚
(EN)FUJI ELECTRIC
单晶体管, IGBT, 63 A, 1.85 V, 340 W, 1.2 kV, TO-247, 3 引脚
(EN)FUJI ELECTRIC
单晶体管, IGBT, 85 A, 1.6 V, 360 W, 600 V, TO-247, 3 引脚
(EN)FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 68 A, 600 V, 0.034 ohm, 10 V, 3 V
(EN)
INFINEON
单晶体管, IGBT, 60 A, 1.55 V, 333 W, 1.1 kV, TO-247, 3 引脚
(EN)INFINEON
单晶体管, IGBT, 20 A, 2.4 V, 170 W, 600 V, TO-247, 3 引脚
(EN)INFINEON
单晶体管, IGBT, 62 A, 1.35 V, 188 W, 650 V, TO-247, 3 引脚
(EN)INFINEON
单晶体管, IGBT, 40 A, 1.65 V, 255 W, 650 V, TO-247, 3 引脚
(EN)INFINEON
单晶体管, IGBT, 80 A, 1.1 V, 536 W, 650 V, TO-247, 3 引脚
(EN)
INFINEON
单晶体管, IGBT, 85 A, 1.65 V, 273 W, 650 V, TO-247, 4 引脚
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 60 A, 600 V, 40 mohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 13.8 A, 600 V, 0.25 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 17.5 A, 700 V, 0.445 ohm, 10 V, 4 V
(EN)INFINEON
单晶体管, IGBT, 45 A, 2.77 V, 200 W, 1.2 kV, TO-247, 3 引脚
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 15 A, 800 V, 600 mohm, 10 V, 4.5 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 170 A, 100 V, 9 mohm, 15 V, 5 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, HiPerFET, N沟道, 30 A, 500 V, 160 mohm, 10 V, 4 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 50 A, 200 V, 45 mohm, 10 V, 4 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 50 A, 500 V, 0.125 ohm, 10 V, 5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 60 A, 650 V, 0.052 ohm, 10 V, 5 V
(EN)IXYS SEMICONDUCTOR
Silicon Carbide IGBT Single Transistor, 75 A, 1.8 V, 300 W, 600 V, TO-247, 3 Pins
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, LINEAR L2?, N沟道, 30 A, 600 V, 240 mohm, 10 V, 2.5 V
(EN)
