规格：晶体管封装类型 TO-247,
STMICROELECTRONICS
单晶体管 双极, NPN, 70 V, 90 W, 15 A, 70 hFE
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 63 A, 1.8 V, 208 W, 600 V, TO-247, 3 引脚
(EN)STMICROELECTRONICS
单晶体管, IGBT, 30 A, 1.85 V, 259 W, 1.2 kV, TO-247, 3 引脚
(EN)STMICROELECTRONICS
单晶体管, IGBT, 50 A, 1.85 V, 375 W, 1.2 kV, TO-247, 3 引脚
(EN)
WOLFSPEED
Silicon Carbide Power MOSFET, N Channel, 30.8 A, 1.2 kV, 0.075 ohm, 15 V, 2.5 V
(EN)STMICROELECTRONICS
单晶体管, IGBT, 80 A, 1.6 V, 375 W, 650 V, TO-247, 3 引脚
(EN)WOLFSPEED
功率场效应管, MOSFET, N沟道, 10 A, 1.2 kV, 0.28 ohm, 20 V, 2.8 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 通用, 70 A, 2.7 V, 290 W, 600 V, TO-247, 3 引脚
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 通用, 75 A, 2.6 V, 463 W, 600 V, TO-247, 3 引脚
(EN)STMICROELECTRONICS
单晶体管, IGBT, 80 A, 1.85 V, 468 W, 1.2 kV, TO-247, 3 引脚
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 75 A, 650 V, 0.017 ohm, 10 V, 3.5 V
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 100 A, 1.7 V, 349 W, 1.2 kV, TO-247, 3 引脚
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 72 A, 2.7 V, 500 W, 1.2 kV, TO-247, 3 引脚
(EN)WOLFSPEED
功率场效应管, MOSFET, N沟道, 72 A, 1.7 kV, 0.045 ohm, 20 V, 2.6 V
(EN)INFINEON
单晶体管, IGBT, 30 A, 2.1 V, 312 W, 1.6 kV, TO-247, 3 引脚
(EN)SEMELAB
晶体管, MOSFET, P沟道, 8 A, -160 V, 1.5 ohm, -1.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 20 A, 500 V, 270 mohm, 10 V, 4 V
(EN)ROHM
功率场效应管, MOSFET, N沟道, 35 A, 1.2 kV, 0.08 ohm, 18 V, 4 V
(EN)STMICROELECTRONICS
单晶体管, IGBT, 30 A, 1.85 V, 259 W, 1.2 kV, TO-247, 3 引脚
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 43.3 A, 700 V, 0.072 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 65 A, 650 V, 0.0354 ohm, 10 V, 4.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 75 A, 650 V, 0.0195 ohm, 10 V, 4.5 V
(EN)
STMICROELECTRONICS
Power MOSFET, N Channel, 66 A, 600 V, 0.037 ohm, 10 V, 4 V
(EN)MULTICOMP
单晶体管 双极, 通用, NPN, 100 V, 125 W, 25 A, 25 hFE
(EN)
