规格：晶体管封装类型 TO-247,
MULTICOMP
单晶体管 双极, 通用, PNP, 100 V, 3 MHz, 125 W, 25 A, 25 hFE
(EN)
VISHAY
晶体管, MOSFET, N沟道, 20 A, 500 V, 270 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 10.5 A, 800 V, 0.65 ohm, 10 V, 3.75 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 23 A, 600 V, 0.132 ohm, 10 V, 3.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 46 A, 800 V, 0.067 ohm, 10 V, 4.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 29 A, 600 V, 0.102 ohm, 10 V, 3.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 47 A, 600 V, 0.0515 ohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 44 A, 650 V, 0.059 ohm, 10 V, 4.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 通用, 75 A, 2.6 V, 463 W, 600 V, TO-247, 3 引脚
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 58 A, 800 V, 0.054 ohm, 10 V, 4.5 V
(EN)
ON SEMICONDUCTOR
双极晶体管
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, 通用, N沟道, 44 A, 500 V, 0.11 ohm, 10 V, 3.15 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 通用, 70 A, 2.7 V, 290 W, 600 V, TO-247, 3 引脚
(EN)WOLFSPEED
功率场效应管, MOSFET, N沟道, 11.5 A, 900 V, 0.28 ohm, 15 V, 2.1 V
(EN)
STMICROELECTRONICS
单晶体管, IGBT, 60 A, 2.75 V, 220 W, 1.2 kV, TO-247, 3 引脚
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 9 A, 800 V, 900 mohm, 10 V, 3.75 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, N通道, 240 A, 1.6 V, 882 W, 650 V, TO-247, 3 引脚
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 75 A, 100 V, 0.0067 ohm, 10 V, 4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 17 A, 800 V, 290 mohm, 10 V, 3 V
(EN)
WOLFSPEED
功率场效应管, MOSFET, C3M SiC, N沟道, 35 A, 1 kV, 0.065 ohm, 15 V, 2.1 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 20 A, 500 V, 250 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.135 ohm, 10 V, 3 V
(EN)WOLFSPEED
功率场效应管, MOSFET, N沟道, 36 A, 900 V, 0.065 ohm, 15 V, 2.1 V
(EN)ROHM
功率场效应管, MOSFET, N沟道, 10 A, 1.2 kV, 0.45 ohm, 18 V, 4 V
(EN)
