规格：晶体管封装类型 TO-247,
STMICROELECTRONICS
单晶体管 双极, 达林顿, NPN, 450 V, 200 W, 30 A, 35 hFE
(EN)ON SEMICONDUCTOR
单晶体管 双极, 达林顿, NPN, 100 V, 4 MHz, 160 W, 20 A, 18000 hFE
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 77.5 A, 600 V, 0.037 ohm, 10 V, 3 V
(EN)INFINEON
单晶体管, IGBT, 25 A, 2.2 V, 190 W, 1.2 kV, TO-247, 3 引脚
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 60 A, 1.45 V, 208 W, 600 V, TO-247, 3 引脚
(EN)STMICROELECTRONICS
单晶体管, IGBT, 80 A, 1.85 V, 375 W, 600 V, TO-247, 3 引脚
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 14 A, 500 V, 0.34 ohm, 10 V, 3.75 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, PNP, -100 V, 125 W, -10 A, 500 hFE
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 20 A, 650 V, 190 mohm, 10 V, 4.5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 16 A, 800 V, 600 mohm, 10 V, 5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, N通道, 150 A, 1.6 V, 375 W, 650 V, TO-247, 3 引脚
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 160 A, 1.7 V, 454 W, 1.2 kV, TO-247, 3 引脚
(EN)ON SEMICONDUCTOR
单晶体管 双极, NPN, 100 V, 125 W, 10 A, 500 hFE
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 36 A, 900 V, 0.1 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, PNP, 250 V, 3 MHz, 150 W, 15 A, 15 hFE
(EN)ON SEMICONDUCTOR
单晶体管 双极, NPN, 60 V, 2.5 MHz, 90 W, 15 A, 5 hFE
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 68 A, 600 V, 0.03 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, CoolMOS, N沟道, 52 A, 500 V, 0.06 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 8 A, 1.5 kV, 1.8 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 13 A, 600 V, 0.48 ohm, 10 V, 3.75 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 43 A, 2.4 V, 298 W, 1.2 kV, TO-247, 3 引脚
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 30 A, 300 V, 37 mohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 18.5 A, 500 V, 0.17 ohm, 13 V, 3 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
