规格：晶体管封装类型 TO-247,
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 13 A, 600 V, 0.26 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, 达林顿, NPN, 100 V, 125 W, 10 A, 1000 hFE
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 60 A, 1.9 V, 208 W, 600 V, TO-247, 3 引脚
(EN)STMICROELECTRONICS
单晶体管 双极, NPN, 450 V, 125 W, 15 A, 8 hFE
(EN)INFINEON
单晶体管, IGBT, 80 A, 1.35 V, 274 W, 650 V, TO-247, 3 引脚
(EN)
MULTICOMP
单晶体管 双极, 通用, NPN, 100 V, 3 MHz, 125 W, 25 A, 75 hFE
(EN)INFINEON
单晶体管, IGBT, 40 A, 2.4 V, 483 W, 1.2 kV, TO-247, 3 引脚
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 14 A, 1 kV, 900 mohm, 10 V, 5 V
(EN)WOLFSPEED
功率场效应管, MOSFET, N沟道, 23 A, 900 V, 0.12 ohm, 15 V, 2.1 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 45 A, 550 V, 100 mohm, 10 V, 4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 5.1 A, 900 V, 0.94 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
单晶体管 双极, NPN, 250 V, 180 W, 60 A, 9 hFE
(EN)INFINEON
单晶体管, IGBT, 80 A, 1.65 V, 429 W, 1.35 kV, TO-247, 3 引脚
(EN)INFINEON
单晶体管, IGBT, 80 A, 1.35 V, 230 W, 650 V, TO-247, 3 引脚
(EN)INFINEON
单晶体管, IGBT, 80 A, 1.42 V, 395 W, 650 V, TO-247, 3 引脚
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 39 A, 600 V, 0.068 ohm, 10 V, 3 V
(EN)WOLFSPEED
功率场效应管, MOSFET, N沟道, 31.6 A, 1.2 kV, 0.08 ohm, 20 V, 3.2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 75 A, 55 V, 0.0065 ohm, 10 V, 4 V
(EN)INFINEON
单晶体管, IGBT, 85 A, 1.05 V, 227 W, 650 V, TO-247, 3 引脚
(EN)
STMICROELECTRONICS
单晶体管 双极, NPN, 700 V, 125 W, 8 A, 5 hFE
(EN)INFINEON
单晶体管, IGBT, 60 A, 1.55 V, 412 W, 1 kV, TO-247, 3 引脚
(EN)INFINEON
单晶体管, IGBT, 40 A, 1.55 V, 288 W, 1.2 kV, TO-247, 3 引脚
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 24 A, 1.8 V, 104 W, 600 V, TO-247, 3 引脚
(EN)
