规格：晶体管封装类型 TO-247,
INFINEON
单晶体管, IGBT, 50 A, 1.6 V, 365 W, 1.2 kV, TO-247, 3 引脚
(EN)INFINEON
单晶体管, IGBT, 30 A, 1.7 V, 110 W, 1.2 kV, TO-247, 3 引脚
(EN)INFINEON
单晶体管, IGBT, 100 A, 1.85 V, 333 W, 600 V, TO-247, 3 引脚
(EN)WOLFSPEED
功率场效应管, MOSFET, N沟道, 60 A, 1.2 kV, 0.04 ohm, 20 V, 2.6 V
(EN)INFINEON
单晶体管, IGBT, 60 A, 1.55 V, 349 W, 1.2 kV, TO-247, 3 引脚
(EN)INFINEON
单晶体管, IGBT, 160 A, 1.5 V, 833 W, 600 V, TO-247, 3 引脚
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 30 A, 500 V, 120 mohm, 10 V, 4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 22 A, 600 V, 0.085 ohm, 10 V, 3.5 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 24.3 A, 650 V, 0.14 ohm, 10 V, 3 V
INFINEON
功率场效应管, MOSFET, N沟道, 20.2 A, 600 V, 0.17 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 77.5 A, 600 V, 0.037 ohm, 10 V, 4 V
(EN)INFINEON
单晶体管, IGBT, 60 A, 1.95 V, 187 W, 600 V, TO-247, 3 引脚
(EN)INFINEON
单晶体管, IGBT, 20 A, 1.7 V, 310 W, 1.2 kV, TO-247, 3 引脚
(EN)
VISHAY
场效应管, N通道, MOSFET, 1KV, 3.1A, TO-247
(EN)INFINEON
晶体管, MOSFET, N沟道, 32 A, 560 V, 110 mohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 23.8 A, 600 V, 0.144 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 9.5 A, 900 V, 400 mohm, 10 V, 3.75 V
(EN)MULTICOMP
单晶体管 双极, NPN, 400 V, 113 W, 6 A, 8 hFE
(EN)INFINEON
单晶体管, IGBT, 60 A, 2.4 V, 375 W, 1.2 kV, TO-247, 3 引脚
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 50 A, 600 V, 0.034 ohm, 10 V, 3.5 V
(EN)WOLFSPEED
功率场效应管, MOSFET, N沟道, 90 A, 1.2 kV, 0.025 ohm, 20 V, 2.4 V
(EN)INFINEON
功率场效应管, MOSFET, AEC-Q101, N沟道, 43.3 A, 650 V, 0.072 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 65 A, 200 V, 25 mohm, 10 V, 5 V
(EN)INFINEON
单晶体管, IGBT, 30 A, 1.7 V, 428 W, 900 V, TO-247, 3 引脚
(EN)
