规格：晶体管封装类型 TO-247,
INFINEON
功率场效应管, MOSFET, N沟道, 53.5 A, 600 V, 0.063 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
单晶体管, IGBT, 60 A, 2.5 V, 200 W, 600 V, TO-247, 3 引脚
(EN)STMICROELECTRONICS
单晶体管 双极, PNP, 100 V, 3 MHz, 125 W, 25 A, 50 hFE
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 22.4 A, 650 V, 0.135 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, NPN, 250 V, 3 MHz, 150 W, 15 A, 15 hFE
(EN)INFINEON
单晶体管, IGBT, 79 A, 1.35 V, 230 W, 650 V, TO-247, 3 引脚
(EN)INFINEON
单晶体管, IGBT, 50 A, 2.3 V, 333 W, 600 V, TO-247, 3 引脚
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 70 A, 2 V, 290 W, 600 V, TO-247, 3 引脚
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 68.5 A, 700 V, 0.037 ohm, 10 V, 4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 11 A, 900 V, 0.39 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 13 A, 550 V, 0.22 ohm, 10 V, 3 V
(EN)INFINEON
单晶体管, IGBT, 通用, 80 A, 2 V, 333 W, 600 V, TO-247, 3 引脚
(EN)INFINEON
单晶体管, IGBT, 通用, 75 A, 2.3 V, 270 W, 1.2 kV, TO-247, 3 引脚
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 通用, 54 A, 2.7 V, 390 W, 1.2 kV, TO-247, 3 引脚
(EN)INFINEON
功率场效应管, MOSFET, AEC-Q101, N沟道, 31.2 A, 650 V, 0.099 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
单晶体管, IGBT, 63 A, 1.3 kV, 250 W, 1.3 kV, TO-247, 3 引脚
(EN)STMICROELECTRONICS
单晶体管, IGBT, 60 A, 2.5 V, 200 W, 600 V, TO-247, 3 引脚
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.113 ohm, 10 V, 4 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 46 A, 650 V, 0.04 ohm, 10 V, 3.5 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 13.8 A, 600 V, 0.252 ohm, 10 V, 4 V
(EN)INFINEON
单晶体管, IGBT, 80 A, 1.55 V, 429 W, 1.2 kV, TO-247, 3 引脚
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 75 A, 55 V, 0.0052 ohm, 10 V, 2.9 V
(EN)INFINEON
单晶体管, IGBT, 30 A, 2.05 V, 187 W, 600 V, TO-247, 3 引脚
(EN)
