规格：晶体管封装类型 TO-247,
INFINEON
单晶体管, IGBT, 85 A, 1.05 V, 227 W, 650 V, TO-247, 3 引脚
(EN)ON SEMICONDUCTOR
单晶体管 双极, 音频, PNP, -250 V, 4 MHz, 200 W, -16 A, 20 hFE
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 40 A, 2.1 V, 156 W, 1.2 kV, TO-247, 3 引脚
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 160 A, 1.55 V, 454 W, 1.2 kV, TO-247, 3 引脚
(EN)
ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, PNP, -140 V, 10 MHz, 120 W, -12 A, 35 hFE
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 60 A, 1.65 V, 167 W, 600 V, TO-247, 3 引脚
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 40 A, 300 V, 85 mohm, 10 V, 4 V
(EN)SEMELAB
晶体管, MOSFET, N沟道, 8 A, 160 V, 1.5 ohm, 1.5 V
(EN)ROHM
功率场效应管, MOSFET, N沟道, 22 A, 1.2 kV, 0.16 ohm, 18 V, 4 V
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 100 A, 1.45 V, 223 W, 600 V, TO-247, 3 引脚
(EN)INFINEON
单晶体管, IGBT, 80 A, 1.35 V, 282 W, 650 V, TO-247, 3 引脚
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 50 A, 600 V, 0.034 ohm, 10 V, 3.5 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 15 A, 600 V, 0.25 ohm, 10 V, 3 V
(EN)INFINEON
单晶体管, IGBT, 40 A, 2.3 V, 270 W, 1.2 kV, TO-247, 3 引脚
(EN)RENESAS
单晶体管, IGBT, 50 A, 1.7 V, 201.6 W, 600 V, TO-247, 3 引脚
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 40 A, 300 V, 85 mohm, 10 V, 4 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 6 A, 1.2 kV, 1.95 ohm, 10 V, 4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 53.5 A, 650 V, 0.063 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 60 A, 2.4 V, 394 W, 1.35 kV, TO-247, 3 引脚
(EN)INFINEON
单晶体管, IGBT, 90 A, 1.65 V, 395 W, 650 V, TO-247, 3 引脚
(EN)
ON SEMICONDUCTOR
双极性晶体管
(EN)
ON SEMICONDUCTOR
单晶体管 双极, PNP, -60 V, 2.5 MHz, 90 W, -15 A, 5 hFE
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 5.7 A, 900 V, 1 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, 通用, NPN, 250 V, 200 W, 16 A, 20 hFE
(EN)
