规格：晶体管封装类型 TO-247,
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 9.2 A, 900 V, 0.82 ohm, 10 V, 3.75 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 60 A, 500 V, 0.1 ohm, 10 V, 5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 18.1 A, 500 V, 0.25 ohm, 13 V, 3 V
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 30 A, 2 V, 294 W, 1.2 kV, TO-247, 3 引脚
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 11 A, 900 V, 0.72 ohm, 10 V, 3.75 V
(EN)INFINEON
单晶体管, IGBT, 通用, 50 A, 2.2 V, 190 W, 1.2 kV, TO-247, 3 引脚
(EN)WOLFSPEED
功率场效应管, MOSFET, N沟道, 4.9 A, 1.7 kV, 0.95 ohm, 20 V, 2.4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 通用, 40 A, 1.8 V, 165 W, 600 V, TO-247, 3 引脚
(EN)MULTICOMP
单晶体管 双极, 通用, PNP, -60 V, 2.5 MHz, 90 W, 15 A, 100 hFE
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 22 A, 600 V, 0.14 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 30 A, 2 V, 156 W, 1.2 kV, TO-247, 3 引脚
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 54.9 A, 850 V, 0.077 ohm, 10 V, 3 V
ON SEMICONDUCTOR
单晶体管 双极, 音频, NPN, 250 V, 4 MHz, 200 W, 2 A, 20 hFE
(EN)MULTICOMP
单晶体管 双极, 通用, PNP, 100 V, 3 MHz, 125 W, 40 A, 25 hFE
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 40 A, 2 V, 165 W, 600 V, TO-247, 3 引脚
(EN)INFINEON
晶体管, MOSFET, N沟道, 21 A, 500 V, 190 mohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, 达林顿, NPN, 350 V, 2 MHz, 150 W, 10 A, 500 hFE
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 58 A, 200 V, 40 mohm, 10 V, 4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.15 ohm, 10 V, 3 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 120 A, 150 V, 16 mohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR
双极性晶体管, PNP, -200V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.25 ohm, 10 V, 4 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 94 A, 300 V, 0.036 ohm, 10 V, 5 V
(EN)
STMICROELECTRONICS
晶体管, IGBT, TO247
(EN)
