规格：晶体管封装类型 TO-263,
INFINEON
晶体管, MOSFET, N沟道, 100 A, 75 V, 7.8 mohm, 10 V, 4 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 75 A, 100 V, 0.0065 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
功率晶体管, NPN, 80V, D2-PAK
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, N Channel, 45 A, 60 V, 0.021 ohm, 10 V, 2.8 V
(EN)
VISHAY
场效应管, P通道, MOSFET, -100V, 6.8A, D2-PAKT
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 17 A, 800 V, 0.25 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, NPN, 80 V, 50 MHz, 50 W, 10 A, 40 hFE
(EN)INFINEON
晶体管, MOSFET, N沟道, 47 A, 55 V, 22 mohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 60 V, 1.3 mohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, P沟道, 2.8 A, -100 V, 1.2 ohm, -10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 10 A, 100 V, 180 mohm, 10 V, 2 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.15 ohm, 10 V, 2 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 12 A, 600 V, 0.32 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 49 A, 55 V, 0.0175 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 260 A, 75 V, 2.1 mohm, 20 V, 4 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 274 A, 40 V, 0.0014 ohm, 10 V, 1.7 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5.5 A, 650 V, 400 mohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 31 A, 200 V, 75 mohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 180 A, 40 V, 0.0009 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 160 A, 60 V, 3.3 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 18 A, 55 V, 0.06 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 51 A, 55 V, 13.5 mohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.003 ohm, 10 V, 4 V
(EN)INFINEON
单晶体管, IGBT, 11 A, 1.75 V, 58 W, 600 V, TO-263, 3 引脚
(EN)
