规格：晶体管封装类型 TO-263,
ON SEMICONDUCTOR
单晶体管 双极, NPN, 400 V, 2 W, 8 A, 200 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 47 A, 55 V, 0.022 ohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 90 A, 100 V, 6.7 mohm, 10 V, 2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 75 A, 55 V, 5.8 mohm, 10 V, 2 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.16 ohm, 10 V, 4.5 V
(EN)
INTERNATIONAL RECTIFIER
MOSFET, N CHANNEL, 40V, 240A, TO-263-7
(EN)INFINEON
晶体管, MOSFET, N沟道, 64 A, 250 V, 0.0175 ohm, 10 V, 3 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 100V, 90A, TO-263-3
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 11 A, 600 V, 320 mohm, 10 V, 5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 280 A, 40 V, 0.0018 ohm, 10 V, 4 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET™, N沟道, 279 A, 60 V, 0.0016 ohm, 10 V, 1.9 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 80 V, 0.0016 ohm, 10 V, 2.8 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 30 A, 100 V, 0.04 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 A, 75 V, 0.0018 ohm, 10 V, 3.1 V
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 55V, 49A, D2-PAK
(EN)
INFINEON
晶体管, MOSFET, N沟道, 320 A, 40 V, 1.6 mohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 50 A, 60 V, 22 mohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 16 A, 60 V, 0.07 ohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -180 A, -40 V, 0.0018 ohm, -10 V, -1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 110 A, 55 V, 0.008 ohm, 10 V, 4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 17.5 A, 700 V, 0.171 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 40 V, 3100 μohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 29 A, 55 V, 40 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 90 A, 60 V, 0.0027 ohm, 10 V, 1.7 V
(EN)LITTELFUSE
单晶体管, IGBT, 20 A, 1.5 V, 165 W, 365 V, TO-263, 3 引脚
(EN)
