规格：晶体管封装类型 TO-263,
INTERNATIONAL RECTIFIER
晶体管, IGBT, 单路, 1.7V, 16A, TO-263
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 40 A, 55 V, 5 mohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 12 A, 600 V, 0.26 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 75 A, 40 V, 2 mohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, P沟道, 12 A, -100 V, 300 mohm, -10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 75 A, 100 V, 0.0048 ohm, 10 V, 4 V
(EN)INFINEON
单晶体管, IGBT, 23 A, 1.55 V, 99 W, 600 V, TO-263, 3 引脚
(EN)INFINEON
晶体管, MOSFET, N沟道, 150 A, 30 V, 3.8 mohm, 10 V, 2.3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0023 ohm, 10 V, 2.7 V
WOLFSPEED
Silicon Carbide Power MOSFET, N Channel, 22 A, 1 kV, 0.12 ohm, 15 V, 2.1 V
(EN)INFINEON
单晶体管, IGBT, 48 A, 1.6 V, 250 W, 600 V, TO-263, 2 引脚
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.13 ohm, 10 V, 4 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET™, N沟道, 349 A, 60 V, 0.0013 ohm, 10 V, 1.8 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 18 A, 80 V, 28 mohm, 10 V, 3 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 200V, 18A, D2-PAK
(EN)ON SEMICONDUCTOR
MOSFET Transistor, P Channel, -18.5 A, -60 V, 0.12 ohm, -5 V, -1.5 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 7.3 A, 650 V, 0.54 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 37.5 A, 75 V, 0.009 ohm, 15 V, 2.5 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.00179 ohm, 10 V, 1.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 24 A, 200 V, 0.0637 ohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 60 A, 60 V, 0.0115 ohm, 10 V, 2.85 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 75 A, 40 V, 4.3 mohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 400 A, 40 V, 0.0009 ohm, 10 V, 4 V
(EN)
