规格：晶体管封装类型 TO-263,
INFINEON
晶体管, MOSFET, N沟道, 80 A, 100 V, 15 mohm, 10 V, 4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 37.9 A, 650 V, 0.09 ohm, 10 V, 3 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, P沟道, -55V, 74A, D2-PAK
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 60 V, 0.0013 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 0.0014 ohm, 4.5 V, 2.5 V
(EN)STMICROELECTRONICS
单晶体管 双极, NPN, 100 V, 70 W, 12 A, 750 hFE
(EN)INFINEON
晶体管, MOSFET, N沟道, 88 A, 200 V, 0.0096 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, P沟道, 19 A, -55 V, 100 mohm, -10 V, -4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -11.5 A, -200 V, 0.36 ohm, -10 V, -5 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 55 V, 8 mohm, 16 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 41 A, 120 V, 0.0123 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -16.7 A, -100 V, 0.115 ohm, -10 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 62 A, 200 V, 22.9 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 0.0014 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, PNP, -100 V, 3 MHz, 65 W, -6 A, 15 hFE
(EN)INFINEON
晶体管, MOSFET, N沟道, 75 A, 40 V, 0.0025 ohm, 10 V, 2.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 80 A, 75 V, 0.0044 ohm, 10 V, 3.1 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 40 A, 100 V, 0.023 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 11 A, 600 V, 0.28 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, HEXFET, 100V, 85A, D2PAK
(EN)INFINEON
晶体管, MOSFET, N沟道, 17 A, 55 V, 0.07 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 4.5 A, 400 V, 490 mohm, 10 V, 3.75 V
(EN)ROHM
功率场效应管, MOSFET, N沟道, 11 A, 600 V, 0.34 ohm, 10 V, 5 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 37 A, 200 V, 28 mohm, 10 V, 3 V
(EN)ROHM
晶体管, MOSFET, N沟道, 55 A, 100 V, 0.012 ohm, 10 V, 2.5 V
(EN)
