规格：晶体管封装类型 TO-263,
INFINEON
晶体管, MOSFET, N沟道, 130 A, 100 V, 0.0056 ohm, 10 V, 2 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.4 A, 600 V, 3.3 ohm, 10 V, 3.75 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 83 A, 150 V, 0.012 ohm, 10 V, 5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 79 A, 60 V, 0.0071 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 54 A, 30 V, 9.5 mohm, 10 V, 2.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 270 A, 60 V, 0.002 ohm, 10 V, 4 V
(EN)
WOLFSPEED
功率场效应管, MOSFET, N沟道, 35 A, 1 kV, 0.065 ohm, 15 V, 2.1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 66 A, 100 V, 0.0125 ohm, 5 V, 1.7 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, P沟道, -100V, 40A D2-PAK
(EN)ROHM
晶体管, MOSFET, P沟道, -15 A, -100 V, 0.085 ohm, -10 V, -2.5 V
(EN)
VISHAY
场效应管, P通道, MOSFET, -100V, 19A D2-PAK
(EN)
INFINEON
晶体管, MOSFET, N沟道, 200 A, 40 V, 0.001 ohm, 4.5 V, 2.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 58 A, 100 V, 0.0107 ohm, 10 V, 2.7 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 80 V, 0.0059 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 21 A, 600 V, 0.13 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 150 mohm, 10 V, 5 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 60 A, 60 V, 16 mohm, 5 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 59 A, 100 V, 25 mohm, 10 V, 5.5 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 33 A, 600 V, 0.083 ohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 110 A, 40 V, 1.7 mohm, 10 V, 1.2 V
(EN)
VISHAY
MOSFET, N CHANNEL, 60V, 110A, TO-263-3
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.00166 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 59 A, 100 V, 18 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0036 ohm, 10 V, 2.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 82 A, 75 V, 13 mohm, 10 V, 4 V
(EN)
