规格：晶体管封装类型 TO-263,
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4.5 A, 600 V, 650 mohm, 10 V, 3.75 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 80 A, 75 V, 0.00734 ohm, 20 V, 4 V
(EN)
IXYS SEMICONDUCTOR
单晶体管, IGBT, 60 A, 3.5 V, 300 W, 1.2 kV, TO-263, 3 引脚
(EN)
VISHAY
晶体管, MOSFET, N沟道, 120 A, 40 V, 0.00121 ohm, 10 V, 2 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 4 A, 650 V, 0.85 ohm, 10 V, 5 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 75 V, 3.4 mohm, 10 V, 2.3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.00445 ohm, 10 V, 1.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 A, 40 V, 5.5 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
功率晶体管, NPN, 100V, D2-PAK
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 55V, 104A, D2-PAK
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 24 A, 600 V, 0.11 ohm, 10 V, 4 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 34 A, 100 V, 0.0243 ohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 40 V, 2400 μohm, 10 V, 3 V
(EN)INFINEON
单晶体管, IGBT, 40 A, 2.5 V, 160 W, 600 V, TO-263, 3 引脚
(EN)STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 28 A, 600 V, 0.094 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, P沟道, 12 A, -55 V, 175 mohm, -10 V, -4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.004 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 162 A, 40 V, 4 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 33 A, 650 V, 0.07 ohm, 10 V, 4 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 228 A, 55 V, 0.0023 ohm, 10 V, 2.3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 170 A, 40 V, 3.6 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 195 A, 60 V, 0.0019 ohm, 10 V, 1 V
(EN)INFINEON
单晶体管, IGBT, 15 A, 2.05 V, 130 W, 600 V, TO-263, 3 引脚
(EN)INFINEON
晶体管, MOSFET, N沟道, 60 A, 150 V, 32 mohm, 10 V, 5 V
(EN)
