规格：晶体管封装类型 TO-263,
INFINEON
晶体管, MOSFET, N沟道, 240 A, 40 V, 0.001 ohm, 10 V, 3.9 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.0016 ohm, 10 V, 1.7 V
INFINEON
晶体管, MOSFET, N沟道, 338 A, 60 V, 0.00115 ohm, 10 V, 3.7 V
(EN)
GENESIC SEMICONDUCTOR
碳化硅结晶体管, 1.2KV, 10A, TO-263
(EN)
INFINEON
晶体管, MOSFET, N沟道, 120 A, 30 V, 6 mohm, 10 V, 1 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.135 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 60V, 130A, D2-PAK
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 21 A, 500 V, 0.135 ohm, 10 V, 3 V
(EN)
INFINEON
MOSFET, N-CH, 75V, 85A, TO-263AB-3
(EN)INFINEON
晶体管, MOSFET, N沟道, 89 A, 75 V, 9.4 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 9.3 A, 200 V, 300 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 240 A, 55 V, 0.002 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 110 A, 100 V, 0.0032 ohm, 4.5 V, 2.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 75 A, 100 V, 7.2 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 160 A, 55 V, 2.6 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 31 A, 200 V, 82 mohm, 10 V, 5.5 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -60V, 11A, TO-263, 整卷
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 47 A, -60 V, 26 mohm, -10 V, -4 V
(EN)INFINEON
单晶体管, IGBT, 10 A, 2.05 V, 110 W, 600 V, TO-263, 3 引脚
(EN)INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 0.0011 ohm, 10 V, 2.2 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 200V, 5.2A D2-PAK
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, P沟道, -60V, 18.5A, D2-PAK
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0126 ohm, 10 V, 3 V
(EN)GENESIC SEMICONDUCTOR
碳化硅结晶体管, 1.2KV, 5A, TO-263
(EN)INFINEON
晶体管, MOSFET, N沟道, 190 A, 100 V, 3.3 mohm, 20 V, 4 V
(EN)
