规格：晶体管封装类型 TO-263,
VISHAY
晶体管, MOSFET, P沟道, -6.5 A, -200 V, 0.8 ohm, -10 V, -2 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 212 A, 80 V, 0.0026 ohm, 10 V, 2.6 V
(EN)INFINEON
晶体管, MOSFET, P沟道, 13 A, -150 V, 290 mohm, -10 V, -4 V
INFINEON
功率场效应管, MOSFET, N沟道, HEXFET, 60V, 120A, D2PAK
(EN)
INFINEON
场效应管, MOSFET
(EN)
VISHAY
场效应管, P通道, MOSFET, -200V, 6.5A, D2-PAK
(EN)
INFINEON
晶体管, MOSFET, N沟道, 50 A, 30 V, 0.0054 ohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 90 A, 60 V, 3 mohm, 10 V, 3 V
(EN)
INFINEON
MOSFET, N CHANNEL, 40V, 0.0011OHM, 195A,
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 30 V, 2950 μohm, 10 V, 1.7 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 55V, 75A, D2-PAK
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 600V, 0.081Ω, 36A, TO-263-3
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 60V, 60A, D2-PAK
(EN)ROHM
功率场效应管, MOSFET, N沟道, 7 A, 600 V, 0.57 ohm, 10 V, 5 V
(EN)ROHM
功率场效应管, MOSFET, N沟道, 8 A, 600 V, 0.73 ohm, 10 V, 4 V
(EN)ROHM
功率场效应管, MOSFET, N沟道, 11 A, 600 V, 0.34 ohm, 10 V, 4 V
(EN)ROHM
功率场效应管, MOSFET, N沟道, 15 A, 600 V, 0.26 ohm, 10 V, 4 V
(EN)ROHM
功率场效应管, MOSFET, N沟道, 24 A, 600 V, 0.15 ohm, 10 V, 5 V
(EN)ROHM
晶体管, MOSFET, N沟道, 45 A, 200 V, 0.042 ohm, 10 V, 5 V
(EN)ROHM
晶体管, MOSFET, N沟道, 51 A, 250 V, 0.048 ohm, 10 V, 5 V
(EN)ROHM
晶体管, MOSFET, N沟道, 40 A, 100 V, 0.019 ohm, 10 V, 2.5 V
(EN)ROHM
晶体管, MOSFET, N沟道, 65 A, 100 V, 0.0065 ohm, 10 V, 2.5 V
(EN)ROHM
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.17 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 17 A, 600 V, 0.168 ohm, 10 V, 3 V
(EN)ROHM
功率场效应管, MOSFET, N沟道, 7 A, 600 V, 0.57 ohm, 10 V, 4 V
(EN)
