规格：晶体管封装类型 TO-263,
ROHM
功率场效应管, MOSFET, N沟道, 9 A, 600 V, 0.5 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.7 A, 620 V, 2.2 ohm, 10 V, 3.75 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 31 A, 30 V, 1.6 mohm, 10 V, 1.7 V
(EN)ROHM
功率场效应管, MOSFET, N沟道, 4 A, 600 V, 0.9 ohm, 10 V, 4 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 89A, 55V, 3.8W
(EN)INFINEON
晶体管, MOSFET, N沟道, 200 A, 30 V, 3 mohm, 10 V, 2.5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 8 A, 650 V, 0.5 ohm, 10 V, 5 V
(EN)INFINEON
单晶体管, IGBT, 24 A, 1.55 V, 140 W, 600 V, TO-263, 2 引脚
(EN)STMICROELECTRONICS
单晶体管 双极, NPN, 100 V, 70 W, 12 A, 750 hFE
(EN)ROHM
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.22 ohm, 10 V, 5 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 77 A, 40 V, 0.0062 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 170 A, 75 V, 0.0033 ohm, 10 V, 4 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 500V, 10.5A, TO-263-3
(EN)INFINEON
场效应管, MOSFET, N沟道, 40V, 160A
(EN)
VISHAY
MOSFET, P CHANNEL, -200V, 0.8OHM, -6.5A, TO-263-3
(EN)INFINEON
晶体管, MOSFET, N沟道, 94 A, 55 V, 7.5 mohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 22 A, 250 V, 55 mohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -200V, 0.54Ω, -7.3A, TO-263-3
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 75 V, 3.8 mohm, 10 V, 4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 100V, 36A, D2-PAK
NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.0019 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -110 A, -40 V, 0.0041 ohm, -10 V, -3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 A, 40 V, 0.00188 ohm, 10 V, 3 V
(EN)
