规格：晶体管封装类型 TO-263,
VISHAY
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0032 ohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0041 ohm, 10 V, 3 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 600V, 33A, TO-263-3
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 100 V, 0.002 ohm, 10 V, 2.7 V
(EN)INFINEON
单晶体管, IGBT, 90 A, 1.5 V, 333 W, 600 V, TO-263, 3 引脚
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 120 A, 40 V, 0.0043 ohm, 10 V, 2 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 4.5 A, 500 V, 480 mohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
单晶体管 双极, NPN, 400 V, 80 W, 8 A, 18 hFE
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 27.5 A, 60 V, 15 mohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 160 A, 100 V, 0.0033 ohm, 10 V, 2.7 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 42 A, 650 V, 0.056 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
IGBT Single Transistor, 40 A, 1.3 V, 200 W, 412 V, TO-263, 3 Pins
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 17 A, 500 V, 0.23 ohm, 10 V, 3.75 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 28 A, 100 V, 77 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -200V, 11.5mA
(EN)
INFINEON
晶体管, MOSFET, N沟道, 160 A, 135 V, 0.0047 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 240 A, 40 V, 0.00055 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.00163 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 64 A, 200 V, 0.018 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -100 A, -75 V, 0.0062 ohm, -10 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -110 A, -60 V, 0.0065 ohm, -10 V, -3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 44 A, 200 V, 54 mohm, 10 V, 5 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 40 V, 0.00116 ohm, 10 V, 3 V
(EN)
