规格：晶体管封装类型 TO-263,
ROHM
功率场效应管, MOSFET, N沟道, 24 A, 600 V, 0.15 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 51 A, 55 V, 13.9 mohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 8 A, 500 V, 850 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, P沟道, -30V, 50A, D2-PAK
(EN)INFINEON
晶体管, MOSFET, P沟道, 40 A, -100 V, 60 mohm, -10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -110 A, -60 V, 0.0065 ohm, -10 V, -3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 160 A, 40 V, 2.7 mohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 1.5 mohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 240 A, 40 V, 1.5 mohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 110 A, 55 V, 0.0049 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 21 A, 150 V, 0.082 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 73 A, 100 V, 0.011 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 51 A, 55 V, 0.0111 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, 达林顿, NPN, 350 V, 2 MHz, 150 W, 10 A, 500 hFE
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 55 V, 5.5 mohm, 10 V, 2.3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 75 V, 6 mohm, 10 V, 2.3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 78 A, 75 V, 8.6 mohm, 10 V, 2.3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 80 V, 0.0031 ohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0039 ohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 60 V, 2290 μohm, 5 V, 1.7 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 75 A, 40 V, 3400 μohm, 5 V, 1.7 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 100 V, 7490 μohm, 5 V, 1.7 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 36 A, 600 V, 0.081 ohm, 10 V, 2 V
(EN)
