规格：晶体管封装类型 TO-263,
INFINEON
MOSFET, N CHANNEL, 60V, 240A, TO-263-7
(EN)
INFINEON
晶体管, MOSFET, HEXFET, N沟道, 197 A, 75 V, 3.05 mohm, 10 V, 3.7 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 170W, D2-PAK
(EN)
INFINEON
晶体管, MOSFET, N沟道, 17 A, 55 V, 70 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, IGBT, 600V, 31A
(EN)INFINEON
单晶体管, IGBT, 16 A, 1.7 V, 77 W, 600 V, TO-263, 3 引脚
(EN)INFINEON
晶体管, IGBT, 600V, 13A
(EN)INFINEON
晶体管, MOSFET, N沟道, 110 A, 40 V, 6.5 mohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 116 A, 30 V, 7 mohm, 10 V, 3 V
(EN)INFINEON
场效应管, MOSFET
(EN)INFINEON
晶体管, MOSFET, N沟道, 200 A, 30 V, 0.0026 ohm, 10 V, 2.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 180 A, 20 V, 0.003 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 17 A, 100 V, 100 mohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 17 A, 200 V, 180 mohm, 5 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 270 A, 60 V, 0.0019 ohm, 10 V, 2.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 30 A, 55 V, 35 mohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 47 A, 55 V, 0.022 ohm, 10 V, 2 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, 极性FET, N沟道, 10 A, 800 V, 1.1 ohm, 10 V, 5.5 V
(EN)
ON SEMICONDUCTOR
功率晶体管, NPN, 100V, D2-PAK
(EN)ON SEMICONDUCTOR
单晶体管 双极, PNP, -100 V, 3 MHz, 65 W, -6 A, 15 hFE
(EN)ON SEMICONDUCTOR
单晶体管 双极, NPN, 80 V, 50 MHz, 50 W, 10 A, 40 hFE
(EN)ON SEMICONDUCTOR
单晶体管 双极, PNP, -80 V, 40 MHz, 50 W, -10 A, 40 hFE
(EN)ON SEMICONDUCTOR
场效应管, MOSFET, P沟道, -30V, 50A, D2-PAK
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 74 A, 80 V, 0.009 ohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 37 A, 100 V, 0.021 ohm, 10 V, 3 V
(EN)
