规格：晶体管封装类型 TO-263,
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 110 A, 100 V, 10.5 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 50 A, 100 V, 0.0131 ohm, 10 V, 1.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0024 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 80 A, 30 V, 2.8 mohm, 10 V, 1 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 40 A, 100 V, 28 mohm, 10 V, 2.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 80 V, 0.0011 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 429 A, 24 V, 800 μohm, 10 V, 2 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 22.4 A, 650 V, 0.135 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, P沟道, 40 A, -100 V, 60 mohm, -10 V, -4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 43 A, 150 V, 42 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 64 A, 250 V, 0.0175 ohm, 10 V, 3 V
(EN)
WOLFSPEED
功率场效应管, MOSFET, N沟道, 22 A, 900 V, 0.12 ohm, 15 V, 2.1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -22 A, -100 V, 96 mohm, -10 V, -4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, P沟道, -55V, 42A, D2-PAK
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, P沟道, -55V, 31A, D2-PAK
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 11 A, 650 V, 0.199 ohm, 10 V, 3.5 V
(EN)
ON SEMICONDUCTOR
Power MOSFET, N Channel, 2 A, 1.5 kV, 10 ohm, 10 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 12 A, 650 V, 0.33 ohm, 10 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 55 A, 100 V, 26 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 25 A, 250 V, 0.051 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 60 V, 0.0012 ohm, 10 V, 2.8 V
(EN)STMICROELECTRONICS
单晶体管, IGBT, 60 A, 1.55 V, 258 W, 650 V, TO-263, 3 引脚
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 8.7 A, 650 V, 0.378 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 34 A, 200 V, 0.028 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, P沟道, 11 A, -200 V, 500 mohm, -10 V, -4 V
(EN)
