规格：晶体管封装类型 TO-263,
VISHAY
晶体管, MOSFET, P沟道, -120 A, -60 V, 0.0056 ohm, -10 V, -2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 49 A, 55 V, 0.0175 ohm, 10 V, 4 V
(EN)
VISHAY
MOSFET, N CHANNEL, 650V, 24A, TO-263-3
(EN)INFINEON
晶体管, MOSFET, N沟道, 85 A, 150 V, 0.012 ohm, 10 V, 5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 17 A, 100 V, 0.1 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, NPN, 80 V, 50 MHz, 50 W, 10 A, 40 hFE
(EN)INFINEON
晶体管, MOSFET, N沟道, 48 A, 60 V, 0.023 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 240 A, 40 V, 0.0009 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, P沟道, 23 A, -100 V, 117 mohm, 20 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 240 A, 75 V, 0.0017 ohm, 10 V, 3.7 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 7 A, 650 V, 0.5 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 59 A, 100 V, 14 mohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 36 A, 100 V, 44 mohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 45 A, 60 V, 0.0049 ohm, 10 V, 2.8 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, 达林顿, NPN, 350 V, 2 MHz, 150 W, 10 A, 500 hFE
(EN)INFINEON
晶体管, MOSFET, N沟道, 50 A, 60 V, 6.7 mohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR
双极晶体管阵列, AEC-Q100, NPN, 100 V, 65 W, 6 A, 15 hFE, TO-263
(EN)
INFINEON
晶体管, MOSFET, N沟道, 190 A, 100 V, 0.0032 ohm, 10 V, 2.5 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 10.6 A, 600 V, 0.34 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 27.5 A, 30 V, 10 mohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 460 A, 40 V, 0.0006 ohm, 10 V, 2.8 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 19 A, 650 V, 0.16 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 650 V, 1.2 ohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0032 ohm, 10 V, 3 V
(EN)
