规格：晶体管封装类型 TO-263,
INTERNATIONAL RECTIFIER
场效应管, MOSFET, P沟道, -150V, -150A, D2-PAK
(EN)
WOLFSPEED
功率场效应管, MOSFET, N沟道, 5.3 A, 1.7 kV, 1 ohm, 20 V, 2.6 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 100V, 42A, D2-PAK
(EN)
INFINEON
晶体管, MOSFET, N沟道, 33 A, 100 V, 0.044 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 120 A, 80 V, 0.0027 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 400 A, 40 V, 0.0009 ohm, 10 V, 4 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, HEXFET, 60V, 270A, D2PAK
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.00379 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 17 A, 600 V, 0.17 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 269 A, 75 V, 0.0017 ohm, 10 V, 3.7 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 10 A, 400 V, 550 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -13 A, -150 V, 0.29 ohm, -10 V, -4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 17 A, 800 V, 0.25 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 70 A, 100 V, 0.0094 ohm, 10 V, 3 V
(EN)
INTERNATIONAL RECTIFIER
(EN)VISHAY
晶体管, MOSFET, P沟道, -120 A, -40 V, 0.0025 ohm, -10 V, -2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 200 A, 100 V, 0.0023 ohm, 10 V, 2.8 V
(EN)INFINEON
晶体管, MOSFET, 汽车, N沟道, 86 A, 55 V, 8 mohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 5.6 A, 100 V, 540 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 33 A, 150 V, 0.0345 ohm, 10 V, 5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 36 A, 100 V, 0.044 ohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 120 A, 30 V, 0.0014 ohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 200 A, 100 V, 0.0024 ohm, 10 V, 2.7 V
(EN)
