规格：晶体管封装类型 TO-263,
INFINEON
功率场效应管, MOSFET, N沟道, 11 A, 650 V, 0.34 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5.25 A, 800 V, 650 mohm, 10 V, 3.75 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 33 A, 100 V, 0.044 ohm, 10 V, 4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 55V, 47A, D2-PAK
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 60 V, 0.0015 ohm, 4.5 V, 2.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 75 A, 40 V, 0.0015 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 21 A, 500 V, 0.16 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 8 A, 650 V, 0.9 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
功率晶体管, PNP, -100V D2-PAK
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 3.5 A, 600 V, 850 mohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0026 ohm, 10 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 100 V, 0.0029 ohm, 10 V, 2.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 80 A, 80 V, 0.0046 ohm, 10 V, 2.8 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 9 A, 650 V, 0.35 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 83 A, 150 V, 0.0091 ohm, 10 V, 3 V
(EN)INFINEON
单晶体管, IGBT, 31 A, 1.8 V, 100 W, 600 V, TO-263, 3 引脚
(EN)
VISHAY
晶体管, MOSFET, P沟道, -110 A, -60 V, 0.0055 ohm, -10 V, -3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 43 A, 60 V, 0.0126 ohm, 20 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 150 A, 55 V, 0.0037 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 70 A, 30 V, 3.5 mohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 44 A, 200 V, 0.0186 ohm, 20 V, 5 V
(EN)INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 150V, 43A, D2-PAK
INFINEON
晶体管, MOSFET, N沟道, 120 A, 120 V, 0.0032 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -27 A, -150 V, 0.12 ohm, -10 V, -5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 42 A, 100 V, 36 mohm, 10 V, 4 V
(EN)
