规格：晶体管封装类型 VSON,
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0053 ohm, 10 V, 2.7 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 151 A, 60 V, 0.0027 ohm, 10 V, 2.8 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 60 A, 30 V, 0.0035 ohm, 10 V, 1.4 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 60 A, 30 V, 0.0019 ohm, 10 V, 1.4 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 16.4 A, 650 V, 0.18 ohm, 10 V, 3 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.001 ohm, 10 V, 1.8 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 9 A, 650 V, 0.35 ohm, 10 V, 3 V
INFINEON
功率场效应管, MOSFET, N沟道, 10 A, 650 V, 0.204 ohm, 10 V, 3.5 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 11.1 A, 600 V, 0.27 ohm, 10 V, 3 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0038 ohm, 8 V, 850 mV
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 124 A, 40 V, 0.0028 ohm, 10 V, 1.8 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 40V, 100A, 0.0018Ω, SON-8
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 60 A, 30 V, 0.0042 ohm, 8 V, 1.2 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0025 ohm, 10 V, 1.8 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 50 A, 100 V, 0.0126 ohm, 10 V, 2.8 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 100V, 100A, VSON-8
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0018 ohm, 10 V, 1.9 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET?, N沟道, 50 A, 100 V, 0.0121 ohm, 10 V, 3 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.004 ohm, 10 V, 2.6 V
(EN)TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 30 V, 0.0049 ohm, 8 V, 900 mV
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.00049 ohm, 10 V, 1.5 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 60 A, 30 V, 0.0019 ohm, 10 V, 1.4 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 35 A, 30 V, 0.004 ohm, 10 V, 1.4 V
(EN)
