规格：晶体管封装类型 TO-252,
INFINEON
晶体管, MOSFET, N沟道, 5 A, 200 V, 600 mohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 16 A, 60 V, 0.06 ohm, 10 V, 2 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 5.1 A, 900 V, 0.94 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 400 V, 10 MHz, 15 W, 1 A, 10 hFE
(EN)ON SEMICONDUCTOR
单晶体管 双极, NPN, 100 V, 3 MHz, 1.75 W, 6 A, 15 hFE
(EN)STMICROELECTRONICS
晶体管, MOSFET, P沟道, 2.8 A, -500 V, 3 ohm, 10 V, 3.75 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 29 A, 55 V, 0.0286 ohm, 10 V, 3 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 7 A, 650 V, 0.5 ohm, 10 V, 2 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, HEXFET, 150V, 33A, DPAK
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 5.7 A, 800 V, 0.8 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, 达林顿, PNP, 100 V, 25 MHz, 1.75 W, 2 A, 12 hFE
(EN)ON SEMICONDUCTOR
单晶体管 双极, PNP, -80 V, 90 MHz, 20 W, -8 A, 40 hFE
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0101 ohm, 10 V, 1.8 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 2.5 A, 200 V, 650 mohm, 5 V, 2.5 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -60V, 5.1A, D-PAK
(EN)
ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, PNP, -60 V, 2 MHz, 1.75 W, -10 A, 5 hFE
(EN)
ON SEMICONDUCTOR
单晶体管 双极, PNP, -50 V, 150 MHz, 15 W, -3 A, 140 hFE
(EN)ON SEMICONDUCTOR
单晶体管 双极, NPN, 20 V, 120 MHz, 15 W, 5 A, 160 hFE
(EN)INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 90 A, 30 V, 0.0025 ohm, 10 V, 1.6 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, PNP, -50 V, 150 MHz, 15 W, -3 A, 200 hFE
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 9 A, 100 V, 0.18 ohm, 10 V, 2.6 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, NPN, 100 V, 300 MHz, 15 W, 2 A, 300 hFE
(EN)STMICROELECTRONICS
单晶体管 双极, NPN, 60 V, 20 W, 10 A, 5 hFE
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 18 A, 200 V, 125 mohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 1KV, 1.6mA
(EN)
