规格：晶体管封装类型 TO-252,
ON SEMICONDUCTOR
单晶体管 双极, NPN, 100 V, 180 MHz, 20 W, 4 A, 200 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, 通用, NPN, 80 V, 50 MHz, 20 W, 8 A, 60 hFE
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 46 A, 60 V, 0.013 ohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 41 A, 100 V, 0.0165 ohm, 10 V, 2.5 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 23 A, 100 V, 0.044 ohm, 4.5 V, 2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 5.3 A, 500 V, 1.2 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 22 A, 30 V, 45 mohm, 10 V, 1 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, PNP, 25 V, 65 MHz, 1.4 W, 5 A, 3 hFE
(EN)INFINEON
晶体管, MOSFET, N沟道, 50 A, 40 V, 0.0072 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 29 A, 60 V, 0.027 ohm, 10 V, 1.6 V
(EN)
ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, NPN, 100 V, 40 MHz, 12.5 W, 4 A, 15 hFE
(EN)ON SEMICONDUCTOR
单晶体管 双极, AEC-Q100, PNP, -350 V, 10 MHz, 15 W, -1 A, 10 hFE
(EN)INFINEON
晶体管, MOSFET, N沟道, 17 A, 55 V, 65 mohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -8.83 A, -60 V, 0.23 ohm, -6.2 V, -3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0071 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 9 A, 600 V, 0.33 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -100 V, 3 MHz, 1.75 W, -6 A, 15 hFE
(EN)ON SEMICONDUCTOR
单晶体管 双极, NPN, 40 V, 3 MHz, 15 W, 3 A, 10 hFE
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 41 A, 30 V, 0.0065 ohm, 10 V, 1.7 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 101 A, 40 V, 0.0036 ohm, 10 V, 3.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 90 A, 30 V, 0.0018 ohm, 10 V, 1.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 90 A, 40 V, 3 mohm, 10 V, 1.2 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 41 A, 30 V, 0.0069 ohm, 10 V, 1.8 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -90 A, -30 V, 0.0036 ohm, -10 V, -3 V
(EN)STMICROELECTRONICS
单晶体管 双极, NPN, 100 V, 25 MHz, 20 W, 2 A, 1000 hFE
(EN)
