规格：晶体管封装类型 TO-252,
VISHAY
晶体管, MOSFET, P沟道, 5.1 A, -60 V, 500 mohm, -10 V, -4 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 13 A, 550 V, 0.18 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 16 A, 55 V, 0.075 ohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, P沟道, 3.1 A, -100 V, 1.2 ohm, -10 V, -4 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -50 A, -40 V, 0.0092 ohm, -10 V, -3 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -50 A, -40 V, 6.7 mohm, -10 V, -1 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 14 A, 25 V, 0.0704 ohm, 10 V, 1.5 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -4.2 A, -100 V, 0.55 ohm, -10 V, -1.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 161 A, 30 V, 3.3 mohm, 10 V, 2.3 V
(EN)
ON SEMICONDUCTOR
功率晶体管, PNP, -80V, D2-PAK
(EN)
ON SEMICONDUCTOR
单晶体管 双极, PNP, -50 V, 290 MHz, 15 W, -8 A, 200 hFE
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 46 A, 30 V, 0.0077 ohm, 10 V, 1.9 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, 通用, NPN, 100 V, 3 MHz, 15 W, 3 A, 10 hFE
(EN)
INFINEON
晶体管, MOSFET, P沟道, -90 A, -40 V, 0.0035 ohm, -10 V, -3 V
(EN)DIODES INC.
晶体管, MOSFET, P沟道, -7.2 A, -40 V, 0.041 ohm, -10 V, -3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 40 A, 60 V, 0.011 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0063 ohm, 10 V, 1.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 25 A, 55 V, 37 mohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 30 A, 30 V, 0.0113 ohm, 10 V, 2.2 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 9 A, 55 V, 0.09 ohm, 12 V, 1.75 V
(EN)LITTELFUSE
单晶体管, IGBT, 20 A, 1.3 V, 125 W, 350 V, TO-252, 3 引脚
(EN)STMICROELECTRONICS
单晶体管 双极, PNP, -80 V, 20 W, -8 A, 40 hFE
(EN)INFINEON
晶体管, MOSFET, N沟道, 14.1 A, 500 V, 0.35 ohm, 13 V, 3 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -1.9 A, -200 V, 3 ohm, -10 V, -4 V
(EN)
