规格：晶体管封装类型 TO-252,
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 60 V, 2 MHz, 1.75 W, 10 A, 5 hFE
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 12 A, 60 V, 0.084 ohm, 10 V, 2.9 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)INFINEON
晶体管, MOSFET, N沟道, 56 A, 55 V, 16 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 33 A, 150 V, 0.034 ohm, 10 V, 5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 100 V, 20 W, 8 A, 1000 hFE
(EN)
STMICROELECTRONICS
双极晶体管
(EN)
INFINEON
晶体管, MOSFET, P沟道, -80 A, -30 V, 0.0056 ohm, -10 V, -1.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 42 A, 75 V, 26 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.53 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, PNP, -50 V, 130 MHz, 20 W, -8 A, 140 hFE
(EN)ON SEMICONDUCTOR
单晶体管 双极, NPN, 50 V, 180 MHz, 20 W, 5 A, 200 hFE
(EN)ON SEMICONDUCTOR
单晶体管 双极, PNP, -50 V, 130 MHz, 20 W, -5 A, 140 hFE
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 2.7 A, 400 V, 850 mohm, 10 V, 3.75 V
(EN)INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 35 A, 100 V, 0.02 ohm, 10 V, 1.7 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 50 A, 100 V, 0.025 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -80 V, 40 MHz, 20 W, -8 A, 60 hFE
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 6.4 A, 100 V, 125 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 25 A, 100 V, 30 mohm, 10 V, 2.5 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, TO-252-3
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 55V, 17A, D-PAKS
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 1.85 A, 1 kV, 6.25 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 7 A, 200 V, 0.35 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -8.8 A, -100 V, 0.162 ohm, -10 V, -1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 8.7 A, 100 V, 190 mohm, 10 V, 4 V
(EN)
