规格：晶体管封装类型 TO-252,
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 17.5 A, 60 V, 14 mohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 21 A, 100 V, 28.5 mohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, AEC-Q101, PNP, -300 V, 10 MHz, 15 W, -500 mA, 30 hFE
(EN)
VISHAY
晶体管, MOSFET, P沟道, -50 A, -40 V, 0.0076 ohm, -10 V, -1.5 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 30V, 161A, D-PAK
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 4.6 A, 650 V, 950 mohm, 10 V, 5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -2.1 A, -500 V, 3.9 ohm, -10 V, -5 V
(EN)
ON SEMICONDUCTOR
晶体管, NPN
(EN)
INTERNATIONAL RECTIFIER
场效应管, N通道, MOSFET, 55V, 17A, D-PAK
(EN)INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 55V, 42A, D-PAKS
(EN)INFINEON
晶体管, MOSFET, N沟道, 84 A, 12 V, 8.5 mohm, 4.5 V, 1.9 V
(EN)ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 75 A, 30 V, 0.004 ohm, 10 V, 800 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 30 A, 30 V, 0.0113 ohm, 10 V, 2.2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 57 A, 75 V, 12.5 mohm, 10 V, 2.3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 3.2 A, 560 V, 1.25 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 12 A, 60 V, 0.08 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 24 A, 60 V, 0.036 ohm, 5 V, 1.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 15 A, 100 V, 0.115 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 25 A, 30 V, 0.004 ohm, 10 V, 1.8 V
(EN)DIODES INC.
晶体管, MOSFET, P沟道, -35 A, -40 V, 0.007 ohm, -10 V, -2 V
(EN)INTERNATIONAL RECTIFIER
场效应管, P通道, MOSFET, -55V, 11A, D-PAK
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0017 ohm, 10 V, 3 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 22 A, 60 V, 0.018 ohm, 10 V, 3 V
(EN)DIODES INC.
晶体管, MOSFET, P沟道, 10.4 A, -60 V, 55 mohm, -10 V, -1 V
(EN)
