规格：晶体管封装类型 TO-252,
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 32 A, 100 V, 30 mohm, 10 V, 4 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 60V, 43A, D-PAK
(EN)
INFINEON
晶体管, MOSFET, N沟道, 42 A, 40 V, 5.5 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 25 A, 55 V, 45 mohm, 10 V, 4 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -40V, -50A, TO-252-3
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 6.5 A, 600 V, 0.63 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 2.4 A, 500 V, 3 ohm, 10 V, 4 V
(EN)DIODES INC.
晶体管, MOSFET, P沟道, -5.9 A, -100 V, 150 mohm, -10 V, -4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 42 A, 100 V, 0.0178 ohm, 10 V, 1.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 23 A, 30 V, 0.045 ohm, 10 V, 1 V
(EN)STMICROELECTRONICS
单晶体管, IGBT, 25 A, 1.35 V, 125 W, 390 V, TO-252, 3 引脚
(EN)
INTERNATIONAL RECTIFIER
场效应管, P通道, MOSFET, -100V, 6.6A D-PAK
(EN)INTERNATIONAL RECTIFIER
场效应管, MOSFET, 30V, 160A, D-PAK
(EN)
ON SEMICONDUCTOR
晶体管, NPN
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -80 V, 40 MHz, 1.75 W, -8 A, 40 hFE
(EN)INFINEON
晶体管, MOSFET, N沟道, 61 A, 30 V, 0.0085 ohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 30 A, 60 V, 0.023 ohm, 10 V, 2.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -3.6 A, -100 V, 0.82 ohm, -10 V, -2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0028 ohm, 10 V, 3 V
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 9 A, 650 V, 0.43 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, 通用, NPN, 400 V, 10 MHz, 1.56 W, 1 A, 30 hFE
(EN)INFINEON
晶体管, MOSFET, N沟道, 43 A, 100 V, 0.0147 ohm, 10 V, 2.7 V
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 12 A, 650 V, 0.23 ohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 74 A, 75 V, 9.3 mohm, 10 V, 2.3 V
(EN)
