规格：晶体管封装类型 TO-252,
ON SEMICONDUCTOR
单晶体管 双极, 通用, PNP, 100 V, 3 MHz, 20 W, 6 A, 30 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0025 ohm, 10 V, 1.7 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 90 A, 55 V, 6.6 mohm, 10 V, 2.3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 1.5 A, 800 V, 3 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 7 A, 55 V, 35 mohm, 5 V, 2.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 45 A, 75 V, 0.0176 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 30 A, 55 V, 0.0113 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 30 A, 75 V, 0.0159 ohm, 10 V, 1.6 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 56 A, 60 V, 7.1 mohm, 20 V, 4 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 5 A, 200 V, 0.54 ohm, 10 V, 5.25 V
(EN)VISHAY
晶体管, MOSFET, 沟槽式FET, P沟道, -50 A, -40 V, 0.012 ohm, -10 V, -1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 75 A, 120 V, 0.0092 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 42 A, 75 V, 22 mohm, 10 V, 4 V
(EN)ROHM
晶体管, MOSFET, P沟道, -14 A, -60 V, 0.06 ohm, -10 V, -3 V
(EN)ROHM
晶体管, MOSFET, N沟道, 3 A, 200 V, 0.62 ohm, 10 V, 5.2 V
(EN)ROHM
晶体管, MOSFET, P沟道, -4.5 A, -45 V, 0.11 ohm, -10 V, -3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 6.1 A, 650 V, 0.54 ohm, 10 V, 3 V
(EN)ROHM
功率场效应管, MOSFET, N沟道, 1.7 A, 600 V, 2.8 ohm, 10 V, 4 V
(EN)ROHM
晶体管, MOSFET, N沟道, 10 A, 100 V, 0.095 ohm, 10 V, 2.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 1.8 A, 500 V, 2.7 ohm, 10 V, 3 V
(EN)
VISHAY
MOSFET, N CHANNEL, 650V, 7A, TO-252-3
(EN)ROHM
晶体管, MOSFET, N沟道, 10 A, 190 V, 0.13 ohm, 10 V, 2.5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 50 A, 20 V, 0.0033 ohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0071 ohm, 10 V, 2 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 75V, 42A, D-PAKS
