规格：晶体管封装类型 TO-252,
ON SEMICONDUCTOR
单晶体管 双极, AEC-Q100, NPN, 350 V, 90 MHz, 45 W, 4 A, 300 hFE
(EN)INFINEON
单晶体管, IGBT, 4 A, 2.1 V, 75 W, 600 V, TO-252, 3 引脚
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 15.2 A, 40 V, 6.7 mohm, 10 V, 2.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 61 A, 55 V, 14 mohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 14 A, 150 V, 180 mohm, 10 V, 5.5 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 7 A, 650 V, 0.56 ohm, 10 V, 4 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -16 A, -45 V, 0.035 ohm, -10 V, -3 V
(EN)ROHM
晶体管, MOSFET, N沟道, 8 A, 60 V, 0.057 ohm, 10 V, 2.5 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 6.2 A, 650 V, 0.68 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 250V
(EN)INFINEON
晶体管, MOSFET, N沟道, 91 A, 30 V, 0.0069 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 3.5 A, 55 V, 60 mohm, 5 V, 2.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 42 A, 75 V, 0.0128 ohm, 10 V, 4 V
(EN)ROHM
单晶体管 双极, NPN, 80 V, 200 MHz, 10 W, 5 A, 120 hFE
(EN)ROHM
单晶体管, IGBT, 场截止沟道, 8 A, 1.65 V, 62 W, 650 V, TO-252, 3 引脚
(EN)VISHAY
晶体管, MOSFET, P沟道, -50 A, -40 V, 0.01 ohm, -10 V, -1.5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 30 A, 55 V, 0.016 ohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 12 A, 60 V, 0.15 ohm, 10 V, 2.8 V
ROHM
单晶体管 双极, PNP, -80 V, 200 MHz, 10 W, -5 A, 120 hFE
(EN)ON SEMICONDUCTOR
单晶体管 双极, 通用, NPN, 300 V, 15 W, 500 mA, 240 hFE
(EN)ON SEMICONDUCTOR
单晶体管 双极, 音频, NPN, 80 V, 85 Hz, 20 W, 8 A, 60 hFE
(EN)STMICROELECTRONICS
单晶体管, IGBT, 10 A, 1.2 kV, 75 W, 1.2 kV, TO-252, 3 引脚
(EN)
STMICROELECTRONICS
双极晶体管
(EN)VISHAY
晶体管, MOSFET, P沟道, -8.2 A, -60 V, 0.125 ohm, -10 V, -2 V
(EN)ROHM
晶体管, MOSFET, N沟道, 17.5 A, 100 V, 0.075 ohm, 10 V, 2.5 V
(EN)
